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Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps

文献类型：期刊论文

作者Zhao, Hongquan2; Yang, Yuhui1,2; Wang, Chunxiang2; Zhou, Dahua2; Shi, Xuan2; Li, Yuzhi2; Mao, Yuliang3
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2019-10-16
卷号11期号:41页码:38031-38038
关键词few-layer GeSe field-effect transistors photoresponse time broadband photoresponse direct band gaps ambipolar behavior
ISSN号1944-8244
DOI10.1021/acsami.9b11132
通讯作者Zhao, Hongquan(hqzhao@cigit.ac.cn) ; Shi, Xuan(shixuan@cigit.ac.cn)
英文摘要Few-to-monolayer germanium selenide, a new IV-VI group layered material recently fabricated by mechanical exfoliation and subsequent laser thinning, is promising in very fast and broadband optoelectronic applications for its excellent stability, complicated band structures, inert surface properties, and being a natural p-type semiconductor. However, large-scale production of such few-layer GeSe devices with superior performance is still in early stages. In this study, field-effect transistors made of few-layer GeSe with direct band gaps are fabricated. Transistor performance with Schottky contact characteristics is measured at room temperature. A field-effect mobility of 4 cm(2)/(V s) and drain currents modulated both by holes and electrons are measured. Photoresponses as a function of illumination wavelength, power, and frequency are characterized. The few-layer GeSe transistor shows photoresponse to the illumination wavelengths from visible up to 1400 nm and a photoresponse rise (fall) time of 13 mu s (19 mu s), demonstrating very broadband and fast detection. The ambipolar behavior and the photoresponse characteristics demonstrate great potential of few-layer GeSe for applications in highly stable, very fast, and very broadband optoelectronic devices.
资助项目National Natural Science Foundation of China[61775214] ; National Natural Science Foundation of China[61601433] ; CAS Light of West China Programs ; Chongqing Science and Technology Bureau[cstc2019jcyj-zdxm0098]
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000491219700069
出版者AMER CHEMICAL SOC
源URL[http://119.78.100.138/handle/2HOD01W0/10288]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Zhao, Hongquan; Shi, Xuan
作者单位1.Univ Chinese Acad Sci, Beijing 100064, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
3.Xiangtan Univ, Sch Phys & Optoelect Engn, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
推荐引用方式
GB/T 7714		 Zhao, Hongquan,Yang, Yuhui,Wang, Chunxiang,et al. Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(41):38031-38038.
APA Zhao, Hongquan.,Yang, Yuhui.,Wang, Chunxiang.,Zhou, Dahua.,Shi, Xuan.,...&Mao, Yuliang.(2019).Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps.ACS APPLIED MATERIALS & INTERFACES,11(41),38031-38038.
MLA Zhao, Hongquan,et al."Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps".ACS APPLIED MATERIALS & INTERFACES 11.41(2019):38031-38038.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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