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Broadband InSb/Si heterojunction photodetector with graphene transparent electrode

文献类型：期刊论文

作者Li, Xiaoxia3,4; Sun, Tai4; Zhou, Kai3,4; Hong, Xin3,4; Tang, Xinyue4; Wei, Dacheng1,2; Feng, Wenlin3; Shen, Jun4; Wei, Dapeng3,4
刊名NANOTECHNOLOGY
出版日期2020-07-31
卷号31期号:31页码:9
关键词indium antimonide graphene transparent electrode heterojunction photodetector
ISSN号0957-4484
DOI10.1088/1361-6528/ab884c
通讯作者Shen, Jun(shenjun@cigit.ac.cn)
英文摘要Silicon-based Schottky heterojunction photodetectors are promising due to their compatibility with the semiconductor process. However, the applications of these devices are usually limited to wavelengths shorter than 1.1 mu m due to the low absorption of electrode materials at infrared. In this report, silicon-based compound semiconductor heterojunction photodetectors with graphene transparent electrodes are fabricated. Due to the high absorption of InSb at infrared, as well as the good transparency and excellent electrical conductivity of the graphene, the as-prepared photodetectors show a broadband photoresponse with high performance which includes a specific detectivity of 1.9 x
资助项目NSFC[61705229] ; Youth Innovation Promotion Association of CAS[2015316] ; Youth Innovation Promotion Association of CAS[2018416] ; Project of Chongqing Brain Science Collaborative Innovation Center, Project of CAS Western Young Scholar, Project of CQ CSTC[cstc2017zdcy-zdyfX0001] ; Project of Chongqing Brain Science Collaborative Innovation Center, Project of CAS Western Young Scholar, Project of CQ CSTC[cstc2017zdcy-zdyfX0078] ; Project of Chongqing Science and Technology Bureau[cstc2019jcyj-msxmX0574] ; Project of Chongqing Science and Technology Bureau[cstc2019jscx-msxmX0081] ; Project of Chongqing Science and Technology Bureau[cstc2019jscx-msxmX0024]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000536056800001
出版者IOP PUBLISHING LTD
源URL[http://119.78.100.138/handle/2HOD01W0/11049]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Shen, Jun
作者单位1.Fudan Univ, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China
2.Fudan Univ, Dept Macromol Sci, Shanghai 200433, Peoples R China
3.Chongqing Univ Technol, Coll Sci, Chongqing 400054, Peoples R China
4.Chinese Acad Sci, Chongqing Key Lab Multiscale Mfg Technol, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
推荐引用方式
GB/T 7714		 Li, Xiaoxia,Sun, Tai,Zhou, Kai,et al. Broadband InSb/Si heterojunction photodetector with graphene transparent electrode[J]. NANOTECHNOLOGY,2020,31(31):9.
APA Li, Xiaoxia.,Sun, Tai.,Zhou, Kai.,Hong, Xin.,Tang, Xinyue.,...&Wei, Dapeng.(2020).Broadband InSb/Si heterojunction photodetector with graphene transparent electrode.NANOTECHNOLOGY,31(31),9.
MLA Li, Xiaoxia,et al."Broadband InSb/Si heterojunction photodetector with graphene transparent electrode".NANOTECHNOLOGY 31.31(2020):9.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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