Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors
文献类型:期刊论文
作者 | Yan, Shunya1,2; Yang, Qi2; Feng, Shuanglong2![]() ![]() ![]() ![]() |
刊名 | JOURNAL OF ELECTRONIC MATERIALS
![]() |
出版日期 | 2020-05-27 |
页码 | 7 |
关键词 | PbSe infrared detector sensitized mechanism p-n junction |
ISSN号 | 0361-5235 |
DOI | 10.1007/s11664-020-08215-6 |
通讯作者 | Zhou, Dahua(zhoudahua@cigit.ac.cn) |
英文摘要 | Photodetectors based on polycrystalline lead salts are widely used to detect light in the mid-infrared range because they can be used at room temperature. In their fabrication, the sensitization process is considered to be the most critical factor. In this work, the crystalline structure of PbSe films deposited by electron-beam evaporation was analyzed by scanning electron microscopy, x-ray diffraction, and x-ray photoemission spectroscopy. The results showed that lead oxides were formed during the annealing process. We also investigated the electrical properties of the samples by Hall-effect measurements. In photodetection experiments at room temperature, the PbSe-based photodetectors showed responsivity and detectivity of 0.16 A/W and 6.66 x 10(8) cm Hz(1/2)/W, respectively. Remarkably, we measured a photocurrent even without applying a bias voltage, which implies that the p-n junctions separate the carriers in these films, thus also proving the existence of micro p-n junctions in the film. A carrier separation model is proposed to describe the conduction process. |
资助项目 | National Nature Science Foundation of China[61704172] ; Venture & Innovation support Program for Chongqing Overseas Return[cx2018153] |
WOS研究方向 | Engineering ; Materials Science ; Physics |
语种 | 英语 |
WOS记录号 | WOS:000536051900003 |
出版者 | SPRINGER |
源URL | [http://119.78.100.138/handle/2HOD01W0/11132] ![]() |
专题 | 中国科学院重庆绿色智能技术研究院 |
通讯作者 | Zhou, Dahua |
作者单位 | 1.Southwest Univ, Sch Phys Sci & Technol, MOE Key Lab Luminescence & Real Time Anal, Chongqing 400715, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China |
推荐引用方式 GB/T 7714 | Yan, Shunya,Yang, Qi,Feng, Shuanglong,et al. Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors[J]. JOURNAL OF ELECTRONIC MATERIALS,2020:7. |
APA | Yan, Shunya.,Yang, Qi.,Feng, Shuanglong.,Shen, Jun.,Yang, Jun.,...&Zhou, Dahua.(2020).Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors.JOURNAL OF ELECTRONIC MATERIALS,7. |
MLA | Yan, Shunya,et al."Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors".JOURNAL OF ELECTRONIC MATERIALS (2020):7. |
入库方式: OAI收割
来源:重庆绿色智能技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。