High-Performance On-Chip Electron Sources Based on Electroformed Silicon Oxide
文献类型：期刊论文
| 作者 | Yang, Wei2,3; Li, Zhiwei2,3; Wang, Yuwei1; Shen, Jun4 ; Wei, Dapeng4; Wei, Xianlong2,3
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| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2020-06-11 |
| 页码 | 8 |
| 关键词 | on-chip electron sources graphene resistive switching silicon oxide |
| ISSN号 | 2199-160X |
| DOI | 10.1002/aelm.202000268 |
| 通讯作者 | Wei, Xianlong(weixl@pku.edu.cn) |
| 英文摘要 | On-chip electron sources with the advantages of high emission current and density, high emission efficiency, low working voltage, and easy fabrication are highly desired for scaling down free electron-based devices and systems, especially for realizing those on a chip, but remain challenging. Here, such an on-chip electron source is reported simply based on electroformed silicon oxide between concentric graphene films on silicon oxide substrate. It is demonstrated that electron emission from an electron emitter can be driven by a low voltage about 11 V, and a high emission efficiency of 33.6%. An on-chip electron source with 36 x 36 emitter array in an area of 594 x 594 mu m(2)exhibits an emission current up to 1 mA at 38 V working voltage, corresponding to a high emission density of 283 mA cm(-2). Electron emission from the sources is thought to be generated from horizontal tunneling diodes formed in electroformed silicon oxide. Combined advantages of high emission current and density, high emission efficiency, low working voltage, and easy fabrication make this on-chip electron sources promising in realizing miniature and on-chip free electron-based devices and systems. |
| 资助项目 | National Key Research and Development Program of China[2019YFA0210201] ; National Key Research and Development Program of China[2017YFA0205003] ; National Natural Science Foundation of China[11874068] ; National Natural Science Foundation of China[11890671] ; National Natural Science Foundation of China[61621061] ; Youth Innovation Promotion Association of CAS[2015316] ; Project of CAS Western Young Scholar |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000539590600001 |
| 出版者 | WILEY |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/11449]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Wei, Xianlong |
| 作者单位 | 1.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China 2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China 3.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China 4.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Wei,Li, Zhiwei,Wang, Yuwei,et al. High-Performance On-Chip Electron Sources Based on Electroformed Silicon Oxide[J]. ADVANCED ELECTRONIC MATERIALS,2020:8. |
| APA | Yang, Wei,Li, Zhiwei,Wang, Yuwei,Shen, Jun,Wei, Dapeng,&Wei, Xianlong.(2020).High-Performance On-Chip Electron Sources Based on Electroformed Silicon Oxide.ADVANCED ELECTRONIC MATERIALS,8. |
| MLA | Yang, Wei,et al."High-Performance On-Chip Electron Sources Based on Electroformed Silicon Oxide".ADVANCED ELECTRONIC MATERIALS (2020):8. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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