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Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

文献类型：期刊论文

作者Jiang, Hao3,4; Nie, Changbin4; Fu, Jintao4; Tang, Linlong4; Shen, Jun4; Sun, Feiying4; Sun, Jiuxun3; Zhu, Meng2; Feng, Shuanglong4; Liu, Yang1
刊名NANOPHOTONICS
出版日期2020-09-01
卷号9期号:11页码:3663-3672
ISSN号2192-8606
关键词graphene manipulation photodetector photogating effect silicon-on-insulator
DOI10.1515/nanoph-2020-0261
通讯作者Sun, Jiuxun(sjx@uestc.edu.cn) ; Shi, Haofei(shi@cigit.ac.cn) ; Wei, Xingzhan(weixingzhan@cigit.ac.cn)
英文摘要The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 10(7) A/W and a fast response time of 90 Its were obtained. The specific detectivity D* was measured to be 1.46 X 10(13) Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.
资助项目National Key R&D Program of China[2017YFE0131900] ; Natural Science Foundation of Chongqing, China[cstc2019jcyjjqX0017]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Optics ; Physics
语种英语
出版者WALTER DE GRUYTER GMBH
WOS记录号WOS:000561278000016
源URL[http://119.78.100.138/handle/2HOD01W0/11657]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Sun, Jiuxun; Shi, Haofei; Wei, Xingzhan
作者单位1.Harbin Inst Technol, Dept Phys, Harbin 150001, Peoples R China
2.TianJin Jinhang Inst Tech Phys, Tianjin 300192, Peoples R China
3.Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Peoples R China
4.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
推荐引用方式
GB/T 7714		 Jiang, Hao,Nie, Changbin,Fu, Jintao,et al. Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect[J]. NANOPHOTONICS,2020,9(11):3663-3672.
APA Jiang, Hao.,Nie, Changbin.,Fu, Jintao.,Tang, Linlong.,Shen, Jun.,...&Wei, Xingzhan.(2020).Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect.NANOPHOTONICS,9(11),3663-3672.
MLA Jiang, Hao,et al."Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect".NANOPHOTONICS 9.11(2020):3663-3672.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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