Effects of doping graphene on the performance of graphene-silicon hybrid photoconductive detectors
文献类型：期刊论文
| 作者 | Fu, JinTao2,3; Que, Longcheng4; Jiang, Hao1,2 ; Luo, Wei2; Nie, Changbin2; Leng, Chongqian2; Luo, Ying4; Zhou, Yun4; Lv, Jian4; Zhou, Dahua2
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| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2020-11-27 |
| 卷号 | 31期号:48页码:9 |
| ISSN号 | 0957-4484 |
| 关键词 | graphene film photoconductive detector doping effects |
| DOI | 10.1088/1361-6528/abb108 |
| 通讯作者 | Luo, Ying(yingluo907@uestc.edu.cn) |
| 英文摘要 | The photoconductive detector based on a graphene-silicon heterostructure retains excellent optoelectrical properties, in which the graphene plays an indispensable role, acting as the carrier transporting channel. Herein, we systematically investigate by simulation and experiment how doping graphene will affect the performance of graphene-silicon hybrid photoconductors. Compared with lightly p-doped graphene devices, the responsivity can be made nine times better through increasing the p-type doping level. In addition, the net photocurrent can also be enhanced by about four times through increasing the n-type doping level of graphene. We attribute this improvement to the barrier height change adjusted by doping graphene, which can optimize the lifetime and transport of photocarriers. Such a graphene-doping method, that manipulates the junction region, could offer useful guidance for achieving high-performance graphene photodetectors. |
| 资助项目 | National Key R&D Program of China[2017YFE0131900] ; Natural Science Foundation of Chongqing, China[cstc2019jcyjjqX0017] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000570418600001 |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/11814]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Luo, Ying |
| 作者单位 | 1.Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fu, JinTao,Que, Longcheng,Jiang, Hao,et al. Effects of doping graphene on the performance of graphene-silicon hybrid photoconductive detectors[J]. NANOTECHNOLOGY,2020,31(48):9. |
| APA | Fu, JinTao.,Que, Longcheng.,Jiang, Hao.,Luo, Wei.,Nie, Changbin.,...&Zhou, Dahua.(2020).Effects of doping graphene on the performance of graphene-silicon hybrid photoconductive detectors.NANOTECHNOLOGY,31(48),9. |
| MLA | Fu, JinTao,et al."Effects of doping graphene on the performance of graphene-silicon hybrid photoconductive detectors".NANOTECHNOLOGY 31.48(2020):9. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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