Structure-Dependent Thermoelectric Properties of GeSe1-xTex(0 <= x <= 0.5)
文献类型：期刊论文
| 作者 | Wang, Zhiran1,2; Wu, Hong5; Xi, Ming5; Zhu, Huaxing5; Dai, Lu1,2; Xiong, Qihong5; Wang, Guiwen4; Han, Guang3; Lu, Xu5; Zhou, Xiaoyuan4,5 |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2020-09-16 |
| 卷号 | 12期号:37页码:41381-41389 |
| 关键词 | thermoelectric structure GeSe1-xTex defects carrier concentrations |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.0c10850 |
| 通讯作者 | Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn) ; Wang, Guoyu(guoyuw@cigit.ac.cn) |
| 英文摘要 | GeSe was theoretically predicted to have thermoelectric (TE) performance as high as SnSe. However, the relatively high TE performance was not achieved experimentally in doped GeSe samples with an original orthorhombic structure but observed in Ag(Sb,Bi)(Se,Te)(2) alloyed samples that crystalize in either a rhombohedral or cubic structure. Herein, to clarify the crystal structure-dependent properties, the electrical and thermal transport properties of GeSe1-xTex (0 <= x <= 0.5), where orthorhombic, hexagonal, and rhombohedral phases are stable at room temperature for different Te content, have been studied, without any intentional manipulation on carrier concentration. It is found that the three phases show intrinsically different hole concentrations: similar to 10(16) cm(-3) for the orthorhombic phase but as high as 10(21) cm(-3) for the hexagonal and rhombohedral phases. Ge-rich status in the orthorhombic phase and Ge-poor status in hexagonal and rhombohedral phases may be responsible for the huge difference in hole concentrations. The rhombohedral phase shows a much higher Seebeck coefficient than the hexagonal phase with similar hole concentration, indicating that the profile of valance band maximum for the rhombohedral structure is more favorable for high TE performance than the hexagonal phase in GeSe1-xTex. The highest zT of 0.69 has been obtained in GeSe0.55Te0.45 at 778 K, at which temperature the rhombohedral phase has already transformed to a cubic phase; however, a zT value of 1.74 at 628 K is predicted by the quality factor analysis for rhombohedral GeSe0.55Te0.45 if optimum hole concentration can be achieved. |
| 资助项目 | National Natural Science Foundation of China[11874356] ; National Natural Science Foundation of China[51672270] ; National Natural Science Foundation of China[51802034] ; National Natural Science Foundation of China[11674040] ; National Natural Science Foundation of China[51772035] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH016] ; Project for Fundamental and Frontier Research in Chongqing[cstc2019jcyjjqX0002] ; Fundamental Research Funds for the Ce n t r a l U n i v e r s i t i e s[106112017CDJQJ308821] ; Fundamental Research Funds for the Ce n t r a l U n i v e r s i t i e s[2019CDQYCL003] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000572965700041 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/11829]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Zhou, Xiaoyuan; Wang, Guoyu |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100044, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 3.Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China 4.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China 5.Chongqing Univ, Coll Phys, Chongqing Key Lab Soft Condensed Matter Phys & Sm, Chongqing 401331, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Zhiran,Wu, Hong,Xi, Ming,et al. Structure-Dependent Thermoelectric Properties of GeSe1-xTex(0 <= x <= 0.5)[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(37):41381-41389. |
| APA | Wang, Zhiran.,Wu, Hong.,Xi, Ming.,Zhu, Huaxing.,Dai, Lu.,...&Wang, Guoyu.(2020).Structure-Dependent Thermoelectric Properties of GeSe1-xTex(0 <= x <= 0.5).ACS APPLIED MATERIALS & INTERFACES,12(37),41381-41389. |
| MLA | Wang, Zhiran,et al."Structure-Dependent Thermoelectric Properties of GeSe1-xTex(0 <= x <= 0.5)".ACS APPLIED MATERIALS & INTERFACES 12.37(2020):41381-41389. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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