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Strong lattice anharmonicity securing intrinsically low lattice thermal conductivity and high performance thermoelectric SnSb2Te4 via Se alloying

文献类型：期刊论文

作者Wu, Hong1,2; Lu, Xu2; Wang, Guoyu1; Peng, Kunling5; Zhang, Bin5; Chen, Yongjin5; Gong, Xiangnan5; Tang, Xiaodan2; Zhang, Xuemei4; Feng, Zhenzhen4
刊名NANO ENERGY
出版日期2020-10-01
卷号76页码:10
关键词Thermoelectric SnSb2Te4 Band convergence Lattice anharmonicity Defects
ISSN号2211-2855
DOI10.1016/j.nanoen.2020.105084
通讯作者Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn)
英文摘要Seeking a material with intrinsically low lattice thermal conductivity is crucial for screening high-performance thermoelectric (TE) materials. Here, the TE properties of SnSb2(Te1-xSex)4 (0 <= x <= 0.25) samples are systematically investigated for the first time. An intrinsically ultralow lattice thermal conductivity (similar to 0.56 W m(-1) K-1 at 320 K and similar to 0.46 W m(-1) K-1 at 720 K) has been observed in SnSb2Te4, which can be ascribed to the weak chemical bonding as well as the bond anharmonicity verified by first-principles calculations. Furthermore, alloying with Se enables the remarkable increase in the Seebeck coefficients, resulting from the optimized carrier concentrations due to the enlarged formation energy of intrinsic SnSb-type antisite defects along with the simultaneous enhancement of density-of-states effective mass from the convergence of multiple carrier pockets. As a result, a peak zT value of 0.5 at 720 K and a significant improvement in average zT (similar to 200%) in SnSb2(Te0.75Se0.25)(4) are achieved. This work not only demonstrates the potential of SnSb2Te4-based compounds for practical TE applications, but also provides an insightful guidance to improve TE performance by defect and electronic band engineering.
资助项目National Natural Science Foundation of China[11674040] ; National Natural Science Foundation of China[11904348 11604032] ; National Natural Science Foundation of China[51472036] ; National Natural Science Foundation of China[51672270] ; Fundamental Research Funds for the Central Universities[106112016CDJZR308808] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH016]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000573074100003
出版者ELSEVIER
源URL[http://119.78.100.138/handle/2HOD01W0/11832]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Zhou, Xiaoyuan
作者单位1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
2.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
3.Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China
4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
5.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China
推荐引用方式
GB/T 7714		 Wu, Hong,Lu, Xu,Wang, Guoyu,et al. Strong lattice anharmonicity securing intrinsically low lattice thermal conductivity and high performance thermoelectric SnSb2Te4 via Se alloying[J]. NANO ENERGY,2020,76:10.
APA Wu, Hong.,Lu, Xu.,Wang, Guoyu.,Peng, Kunling.,Zhang, Bin.,...&Zhou, Xiaoyuan.(2020).Strong lattice anharmonicity securing intrinsically low lattice thermal conductivity and high performance thermoelectric SnSb2Te4 via Se alloying.NANO ENERGY,76,10.
MLA Wu, Hong,et al."Strong lattice anharmonicity securing intrinsically low lattice thermal conductivity and high performance thermoelectric SnSb2Te4 via Se alloying".NANO ENERGY 76(2020):10.

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来源：重庆绿色智能技术研究院

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