中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices

文献类型:期刊论文

作者Li, Yuzhi1,2; Shi, Xuan2; Dai, Fangbo2; Zhou, Dahua2; Jin, Minghui2; Zheng, Hongying2; Yang, Yuhui2; Zhao, Hongquan2; Wang, Junzhong1
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2020-12-09
卷号53期号:50页码:9
ISSN号0022-3727
关键词hybrid-structure atomic-layered GeS film PbSe quantum dots photoresponsivity carrier mobility
DOI10.1088/1361-6463/abb102
通讯作者Zhao, Hongquan(hqzhao@cigit.ac.cn)
英文摘要Hybrid structures of quantum dots (QDs) on two-dimensional materials have aroused great interest because of their high absorbance properties and tunable wavelength detection ranges. In this work, 1.44 times the photoresponse bandwidth of PbSe QDs on atomic-layered GeS hybrid structure devices is achieved compared with pure GeS devices due to the transfer of photogenerated carriers between the PbSe QDs and the GeS film. A doubling of the peak photoresponsivity is obtained at a wavelength of 635 nm, and the detectivity of the hybrid devices increases by 39.5 and 27.4 times under 808 and 980 nm illumination, respectively. Additionally, tripling of the carrier mobility is measured in the hybrid devices (165.2 cm(2)V(-1)s(-1)) compared with that of pure atomic-layered GeS devices (54.2 cm(2)V(-1)s(-1)). The concentration of PbSe QDs on the GeS films is optimized for the highest photoresponsivity and carrier mobility of the hybrid devices. The results indicate that a hybrid structure of QDs on atomic-layered materials is a promising way to enhance photodetection.
资助项目National Natural Science Foundation of China[61775214] ; National Natural Science Foundation of China[61601433] ; CAS 'Light of West China' Programs ; Natural Science Foundation of Chongqing, China[cstc2019jcyj-zdxmX0003] ; Natural Science Foundation of Chongqing, China[cstc2019jcyj-msxmX0387]
WOS研究方向Physics
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000576350000001
源URL[http://119.78.100.138/handle/2HOD01W0/11862]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Zhao, Hongquan
作者单位1.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
推荐引用方式
GB/T 7714
Li, Yuzhi,Shi, Xuan,Dai, Fangbo,et al. Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2020,53(50):9.
APA Li, Yuzhi.,Shi, Xuan.,Dai, Fangbo.,Zhou, Dahua.,Jin, Minghui.,...&Wang, Junzhong.(2020).Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices.JOURNAL OF PHYSICS D-APPLIED PHYSICS,53(50),9.
MLA Li, Yuzhi,et al."Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices".JOURNAL OF PHYSICS D-APPLIED PHYSICS 53.50(2020):9.

入库方式: OAI收割

来源:重庆绿色智能技术研究院

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