Highly (100)-orientated SnSe thin films deposited by pulsed-laser deposition
文献类型：期刊论文
| 作者 | Gong, Xiangnan4; Feng, Menglei1; Wu, Hong1; Zhou, Hongpeng1; Suen, Chunhung3; Zou, Hanjun4; Guo, Lijie1; Zhou, Kai4; Chen, Shijian1; Dai, Jiyan3 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2021 |
| 卷号 | 535页码:8 |
| ISSN号 | 0169-4332 |
| 关键词 | SnSe Thin films Pulsed laser deposition Thermal annealing Angle-resolved polarized Raman spectra |
| DOI | 10.1016/j.apsusc.2020.147694 |
| 通讯作者 | Dai, Jiyan(jiyan.dai@polyu.edu.hk) ; Wang, Guoyu(guoyuw@cigit.ac.cn) ; Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn) |
| 英文摘要 | This work aims at improving the quality of the highly (100)-orientated SnSe thin films for thermoelectric applications. The as-deposited films were obtained by controlling the basic parameters including target-to-substrate distance, deposition time and growth temperature through pulsed-laser deposition. The films quality was further improved by vacuum thermal annealing. The microstructure and crystalline structure of the films were studied by X-ray photoelectron spectroscopy, X-ray diffraction, electron probe micro-analyzer, electron back-scatter diffraction, atomic force microscope and Raman spectroscopy. The SnSe thin films grown on SiO2/Si substrate at 673 K followed by thermal annealing at 673 K for 30 min show the best crystal quality and uniform orientation with mirror-like surface, and the corresponding Seebeck coefficient and power factor are about 383 mu V/K and 15.4 mu W/m.K-2, respectively. Angle resolved polarized Raman spectroscopy proved that the surface of the SnSe films is the b-c plane with preferred (1 0 0) orientation crystalline over a large area, providing an important way to prepare thermoelectric thin film devices by pulse laser deposition. |
| 资助项目 | National Natural Science Foundation of China[51772035] ; National Natural Science Foundation of China[11604032] ; National Natural Science Foundation of China[51472036] ; Fundamental Research Funds for the Central Universities[106112017CDJQJ308821] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSWSLH016] ; Natural Science Foundation of Chongqing, China[cstc2019jcyj-msxmX0554] ; Chongqing University |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | ELSEVIER |
| WOS记录号 | WOS:000582373900047 |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/12199]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Dai, Jiyan; Wang, Guoyu; Zhou, Xiaoyuan |
| 作者单位 | 1.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 3.Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China 4.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gong, Xiangnan,Feng, Menglei,Wu, Hong,et al. Highly (100)-orientated SnSe thin films deposited by pulsed-laser deposition[J]. APPLIED SURFACE SCIENCE,2021,535:8. |
| APA | Gong, Xiangnan.,Feng, Menglei.,Wu, Hong.,Zhou, Hongpeng.,Suen, Chunhung.,...&Zhou, Xiaoyuan.(2021).Highly (100)-orientated SnSe thin films deposited by pulsed-laser deposition.APPLIED SURFACE SCIENCE,535,8. |
| MLA | Gong, Xiangnan,et al."Highly (100)-orientated SnSe thin films deposited by pulsed-laser deposition".APPLIED SURFACE SCIENCE 535(2021):8. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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