Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates
文献类型：期刊论文
| 作者 | Dong, Lin ; Sun, Guosheng ; Yu, Jun ; Zheng, Liu ; Liu, Xingfang ; Zhang, Feng ; Yan, Guoguo ; Li, Xiguang ; Wang, Zhanguo |
| 刊名 | applied surface science
 |
| 出版日期 | 2013 |
| 卷号 | 270页码:301-306 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24336]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Dong, Lin,Sun, Guosheng,Yu, Jun,et al. Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates[J]. applied surface science,2013,270:301-306. |
| APA | Dong, Lin.,Sun, Guosheng.,Yu, Jun.,Zheng, Liu.,Liu, Xingfang.,...&Wang, Zhanguo.(2013).Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates.applied surface science,270,301-306. |
| MLA | Dong, Lin,et al."Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates".applied surface science 270(2013):301-306. |
入库方式： OAI收割
来源：半导体研究所
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