Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation
文献类型：期刊论文
| 作者 | Gong, Xiao ; Han, Genquan ; Bai, Fan ; Su, Shaojian ; Guo, Pengfei ; Yang, Yue ; Cheng, Ran ; Zhang, Dongliang ; Zhang, Guangze ; Xue, Chunlai ; Cheng, Buwen ; Pan, Jisheng ; Zhang, Zheng ; Tok, Eng Soon ; Antoniadis, Dimitri ; Yeo, Yee-Chia |
| 刊名 | ieee electron device letters
 |
| 出版日期 | 2013 |
| 卷号 | 34期号:3页码:339-341 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24357]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Gong, Xiao,Han, Genquan,Bai, Fan,et al. Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation[J]. ieee electron device letters,2013,34(3):339-341. |
| APA | Gong, Xiao.,Han, Genquan.,Bai, Fan.,Su, Shaojian.,Guo, Pengfei.,...&Yeo, Yee-Chia.(2013).Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation.ieee electron device letters,34(3),339-341. |
| MLA | Gong, Xiao,et al."Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation".ieee electron device letters 34.3(2013):339-341. |
入库方式： OAI收割
来源：半导体研究所
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