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Melting of charge density wave and Mott gap collapse on 1T-TaS2 induced by interfacial water

文献类型：期刊论文

作者Shen, Shiwei1; Yuan, Xiaoqiu1; Wen, Chenhaoping1; Gao, Jingjing2,3; Luo, Xuan2; Lu, Xinghua4,5; Sun, Yu-Ping2,6,7; Yan, Shichao1,8
刊名PHYSICAL REVIEW MATERIALS
出版日期2020-06-22
卷号4
ISSN号2475-9953
DOI10.1103/PhysRevMaterials.4.064007
通讯作者Yan, Shichao(yanshch@shanghaitech.edu.cn)
英文摘要Microscopically revealing the interactions between interfacial water and the quantum states of matter is an important task from both the materials science and the physics points of view. Here we report a low-temperature scanning tunneling microscopy (STM) and spectroscopy study of water adsorption on the charge density wave compound 1T-TaS2, which has a Mott-insulating ground state. Interfacial water forms monolayer islands with 6 x 6 superstructures on the surface of 1T-TaS2, and the charge order under water islands can be directly imaged in STM topographies taken with negative bias voltages. Compared with the original root 13 x root 13 charge order in 1T-TaS2, the charge order under water islands becomes significantly disordered and denser. A V-shaped gaplike feature emerges in water-covered 1T-TaS2, which may be due to the enhanced dielectric constant of interfacial water, which reduces short-range Coulomb repulsion and induces Mott gap collapse. Our observations open the way to microscopically understanding the interactions between interfacial water and the correlated quantum states of matter.
WOS关键词SUPERCONDUCTIVITY ; STATE ; GROWTH ; PHASE
资助项目Science and Technology Commission of Shanghai Municipality (STCSM)[18QA1403100] ; National Science Foundation of China[11874042] ; ShanghaiTech University ; National Key Research and Development Program[2016YFA0300404] ; National Nature Science Foundation of China[11674326] ; National Nature Science Foundation of China[11874357] ; National Natural Science Foundation of China[U1832141] ; National Natural Science Foundation of China[U1932217] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1832141] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1932217]
WOS研究方向Materials Science
语种英语
出版者AMER PHYSICAL SOC
WOS记录号WOS:000541708700004
资助机构Science and Technology Commission of Shanghai Municipality (STCSM) ; National Science Foundation of China ; ShanghaiTech University ; National Key Research and Development Program ; National Nature Science Foundation of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences' Large-Scale Scientific Facility
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/71321]  
专题中国科学院合肥物质科学研究院
通讯作者Yan, Shichao
作者单位1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
3.Univ Sci & Technol China, Hefei 230026, Peoples R China
4.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
5.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
6.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
7.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
8.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China
推荐引用方式
GB/T 7714		 Shen, Shiwei,Yuan, Xiaoqiu,Wen, Chenhaoping,et al. Melting of charge density wave and Mott gap collapse on 1T-TaS2 induced by interfacial water[J]. PHYSICAL REVIEW MATERIALS,2020,4.
APA Shen, Shiwei.,Yuan, Xiaoqiu.,Wen, Chenhaoping.,Gao, Jingjing.,Luo, Xuan.,...&Yan, Shichao.(2020).Melting of charge density wave and Mott gap collapse on 1T-TaS2 induced by interfacial water.PHYSICAL REVIEW MATERIALS,4.
MLA Shen, Shiwei,et al."Melting of charge density wave and Mott gap collapse on 1T-TaS2 induced by interfacial water".PHYSICAL REVIEW MATERIALS 4(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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