Preparation of High—Quality Poly—Si Films by a Solid Phase Crystallizing Method
文献类型：期刊论文
| 刊名 | 等离子体科学和技术：英文版
 |
| 出版日期 | 2002 |
| 卷号 | 004 |
| 关键词 | 多结晶硅薄膜 固相结晶法 微电子材料 |
| ISSN号 | 1009-0630 |
| 其他题名 | Preparation of High-Quality Poly-Si Films by a Solid Phase Crystallizing Method |
| 英文摘要 | A solid phase crystallizing method been developed to grow a Si crystal at temperatures as low as 550℃.Using this method,a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained.The largest grain size,examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples,is approximately 1μm for substrate temperature at 300℃ and annealed at 550℃ for 3 hours. |
| 语种 | 中文 |
| CSCD记录号 | CSCD:1362022 |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/67181]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 推荐引用方式 GB/T 7714 | . Preparation of High—Quality Poly—Si Films by a Solid Phase Crystallizing Method[J]. 等离子体科学和技术：英文版,2002,004. |
| APA | (2002).Preparation of High—Quality Poly—Si Films by a Solid Phase Crystallizing Method.等离子体科学和技术：英文版,004. |
| MLA | "Preparation of High—Quality Poly—Si Films by a Solid Phase Crystallizing Method".等离子体科学和技术：英文版 004(2002). |
入库方式： OAI收割
来源：合肥物质科学研究院
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