Displacement Talbot lithography for nano-engineering of III-nitride materials
文献类型：期刊论文
| 刊名 | Microsystems & Nanoengineering
 |
| 出版日期 | 2019 |
| 卷号 | 5 |
| 关键词 | Technology T Engineering (General). Civil engineering (General) TA1-2040 |
| ISSN号 | 2055-7434 |
| 英文摘要 | Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D 2 TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL 2 TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN |
| 语种 | 英语 |
| CSCD记录号 | CSCD:6669385 |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/49454]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 推荐引用方式 GB/T 7714 | . Displacement Talbot lithography for nano-engineering of III-nitride materials[J]. Microsystems & Nanoengineering,2019,5. |
| APA | (2019).Displacement Talbot lithography for nano-engineering of III-nitride materials.Microsystems & Nanoengineering,5. |
| MLA | "Displacement Talbot lithography for nano-engineering of III-nitride materials".Microsystems & Nanoengineering 5(2019). |
入库方式： OAI收割
来源：合肥物质科学研究院
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