中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness

文献类型:期刊论文

作者Zikun Cao;   Degang Zhao;   Feng Liang;   Zongshun Liu
刊名MATERIALS RESEARCH EXPRESS
出版日期2020
卷号7期号:11页码:115902
源URL[http://ir.semi.ac.cn/handle/172111/30035]  
专题半导体研究所_集成光电子学国家重点实验室
推荐引用方式
GB/T 7714
Zikun Cao; Degang Zhao; Feng Liang; Zongshun Liu. Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness[J]. MATERIALS RESEARCH EXPRESS,2020,7(11):115902.
APA Zikun Cao; Degang Zhao; Feng Liang; Zongshun Liu.(2020).Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness.MATERIALS RESEARCH EXPRESS,7(11),115902.
MLA Zikun Cao; Degang Zhao; Feng Liang; Zongshun Liu."Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness".MATERIALS RESEARCH EXPRESS 7.11(2020):115902.

入库方式: OAI收割

来源:半导体研究所

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