High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET
文献类型：期刊论文
| 作者 | Zhanwei Shen; Feng Zhang ; Member; IEEE; Guoguo Yan; Zhengxin Wen; Wanshun Zhao; Lei Wang; Xingfang Liu; Guosheng Sun; Yiping Zeng |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2020 |
| 卷号 | 67期号:10页码:4046-4053 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30092]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhanwei Shen; Feng Zhang ; Member; IEEE; Guoguo Yan; Zhengxin Wen; Wanshun Zhao; Lei Wang; Xingfang Liu; Guosheng Sun; Yiping Zeng. High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2020,67(10):4046-4053. |
| APA | Zhanwei Shen; Feng Zhang ; Member; IEEE; Guoguo Yan; Zhengxin Wen; Wanshun Zhao; Lei Wang; Xingfang Liu; Guosheng Sun; Yiping Zeng.(2020).High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET.IEEE TRANSACTIONS ON ELECTRON DEVICES,67(10),4046-4053. |
| MLA | Zhanwei Shen; Feng Zhang ; Member; IEEE; Guoguo Yan; Zhengxin Wen; Wanshun Zhao; Lei Wang; Xingfang Liu; Guosheng Sun; Yiping Zeng."High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET".IEEE TRANSACTIONS ON ELECTRON DEVICES 67.10(2020):4046-4053. |
入库方式： OAI收割
来源：半导体研究所
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