中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface

文献类型:期刊论文

作者Guiying Shen;   Youwen Zhao;   Jing Sun;   Jingming Liu;   Hui Xie;   Jun Yang;  Zhiyuan Dong
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2020
卷号547页码:125800
源URL[http://ir.semi.ac.cn/handle/172111/30096]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Hui Xie; Jun Yang;Zhiyuan Dong. HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface[J]. JOURNAL OF CRYSTAL GROWTH,2020,547:125800.
APA Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Hui Xie; Jun Yang;Zhiyuan Dong.(2020).HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface.JOURNAL OF CRYSTAL GROWTH,547,125800.
MLA Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Hui Xie; Jun Yang;Zhiyuan Dong."HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface".JOURNAL OF CRYSTAL GROWTH 547(2020):125800.

入库方式: OAI收割

来源:半导体研究所

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