Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC
文献类型：期刊论文
| 作者 | Zhanwei Shen; Feng Zhang; Jun Chen; Zhao Fu; Xingfang Liu; Guoguo Yan; Bowen Lv; Yinshu Wang; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2020 |
| 卷号 | 117期号:10页码:102105 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30126]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhanwei Shen; Feng Zhang; Jun Chen; Zhao Fu; Xingfang Liu; Guoguo Yan; Bowen Lv; Yinshu Wang; Lei Wang;Wanshun Zhao; Guosheng Sun; Yiping Zeng. Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC[J]. APPLIED PHYSICS LETTERS,2020,117(10):102105. |
| APA | Zhanwei Shen; Feng Zhang; Jun Chen; Zhao Fu; Xingfang Liu; Guoguo Yan; Bowen Lv; Yinshu Wang; Lei Wang;Wanshun Zhao; Guosheng Sun; Yiping Zeng.(2020).Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC.APPLIED PHYSICS LETTERS,117(10),102105. |
| MLA | Zhanwei Shen; Feng Zhang; Jun Chen; Zhao Fu; Xingfang Liu; Guoguo Yan; Bowen Lv; Yinshu Wang; Lei Wang;Wanshun Zhao; Guosheng Sun; Yiping Zeng."Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC".APPLIED PHYSICS LETTERS 117.10(2020):102105. |
入库方式： OAI收割
来源：半导体研究所
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