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Two-Dimensional IV-V Monolayers with Highly Anisotropic Carrier Mobility and Electric Transport Properties

文献类型：期刊论文

作者Li, Pengfei2,3; Wu, Wenjun4; Xu, Yuehua4; Liu, Jun2,3; Wu, Shouliang2,3; Ye, Yixing2,3; Liang, Changhao2,3; Zeng, Xiao Cheng1
刊名JOURNAL OF PHYSICAL CHEMISTRY LETTERS
出版日期2021-01-28
卷号12
ISSN号1948-7185
DOI10.1021/acs.jpclett.0c03656
通讯作者Xu, Yuehua(yhxu@cczu.edu.cn) ; Liang, Changhao(chliang@issp.ac.cn) ; Zeng, Xiao Cheng(xzeng1@unl.edu)
英文摘要Two dimensional (2D) semiconductors with anisotropic properties (e.g., mechanical, optical, and electric transport anisotropy) have long been sought in materials research, especially 2D semiconducting sheets with strong anisotropy in carrier mobility, e.g., n-type in one direction and p-type in another direction. Here, we report a comprehensive study of the carrier mobility and electric transport anisotropy of a class of 2D IV-V monolayers, XAs (X = Si or Ge), by using density functional theory methods coupled with deformation potential theory and non-equilibrium Green's function method. We find that the polarity of room-temperature carrier mobility mu of the 2D XAs monolayer is highly dependent on the lattice direction. In particular, for the SiAs monolayer, the mu values of the electron (e) and hole (h) are 1.25 x 10(3) and 0.39 x 10(3) cm(2) V-1 s(-1), respectively, in the a direction and 0.31 x 10(3) and 1.12 x 10(3) cm(2) s(-1), respectively, for the b direction. The computed electric transport properties also show that the SiAs monolayer exhibits strong anisotropy in the biased voltage in the range of -1 to 1 V. In particular, the current reflects the ON state in the a direction but the OFF state in the b direction. In find that the uniaxial strain can significantly improve the electric transport performance and even lead to the negative differential conductance at 10% strain. The unique transport properties of the 2D XAs monolayers can be exploited for potential applications in nanoelectronics.
资助项目National Natural Science Foundation of China (NSFC)[11604320] ; National Natural Science Foundation of China (NSFC)[51571186] ; National Natural Science Foundation of China (NSFC)[11674321] ; National Natural Science Foundation of China (NSFC)[51801205] ; key research and development program of Anhui province[201904a05020049] ; National Natural Science Foundation of China[51772213]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000614318900014
资助机构National Natural Science Foundation of China (NSFC) ; key research and development program of Anhui province ; National Natural Science Foundation of China
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/120209]  
专题中国科学院合肥物质科学研究院
通讯作者Xu, Yuehua; Liang, Changhao; Zeng, Xiao Cheng
作者单位1.Univ Nebraska Lincoln, Dept Chem, Lincoln, NE 68588 USA
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
3.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, Hefei 230031, Peoples R China
4.Changzhou Univ, Sch Microelect & Control Engn, Changzhou 213164, Jiangsu, Peoples R China
推荐引用方式
GB/T 7714		 Li, Pengfei,Wu, Wenjun,Xu, Yuehua,et al. Two-Dimensional IV-V Monolayers with Highly Anisotropic Carrier Mobility and Electric Transport Properties[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2021,12.
APA Li, Pengfei.,Wu, Wenjun.,Xu, Yuehua.,Liu, Jun.,Wu, Shouliang.,...&Zeng, Xiao Cheng.(2021).Two-Dimensional IV-V Monolayers with Highly Anisotropic Carrier Mobility and Electric Transport Properties.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,12.
MLA Li, Pengfei,et al."Two-Dimensional IV-V Monolayers with Highly Anisotropic Carrier Mobility and Electric Transport Properties".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 12(2021).

入库方式： OAI收割

来源：合肥物质科学研究院

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