Stitching Graphene Sheets with Graphitic Carbon Nitride: Constructing a Highly Thermally Conductive rGO/g-C3N4 Film with Excellent Heating Capability
文献类型:期刊论文
作者 | Wang, Yanyan1,2; Zhang, Xian1![]() ![]() ![]() |
刊名 | ACS APPLIED MATERIALS & INTERFACES
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出版日期 | 2021-02-10 |
卷号 | 13 |
关键词 | graphene graphitic carbon nitride thermal conductivity solar-thermal response electric-thermal response |
ISSN号 | 1944-8244 |
DOI | 10.1021/acsami.0c22057 |
通讯作者 | Zhang, Xian(xzhang@issp.ac.cn) ; Wu, Bin(17705@ahu.edu.cn) ; Zeng, Xiaoliang(xl.zeng@siat.ac.cn) ; Tian, Xingyou(xytian@issp.ac.cn) |
英文摘要 | Driven by the evolution of electronic packaging technology for high-dense integration of high-power, high-frequency, and multi-function devices in modern electronics, thermal management materials have become a crucial component for guaranteeing the stable and reliable operation of devices. Because of its admirable in-plane thermal conductivity, graphene is considered as a desired thermal conductor. However, the promise of graphene films has been greatly weakened as the existence of grain boundaries lead to a high extent of phonon scattering. Here, a stitching strategy is adopted to fabricate an rGO/g-C3N4 film, where 2D g-C3N4 works as a linker to covalently connect adjacent rGO sheets for expanding the size of graphene and forming an in-plane rGO/g-C3N4 heterostructure. The in-plane thermal conductivity of the rGO/g-C3N4 film reaches 41.2 W m(-1) K-1 at a g-C3N4 content of only 1 wt %, which increased by 17.3% compared to pristine rGO. The interfaced thermal resistance between rGO and g-C3N4 is further examined by non-equilibrium molecular dynamics simulations. Furthermore, owing to the unique light absorption and welding ability of g-C3N4, the rGO/g-C3N4 film presents superior solar-thermal and electric-thermal responses to controllably regulate the chip temperature against overcooling. This work provides a facile approach to construct a large-sized rGO sheet and combines heat dissipation and heating capability in the same thermal management material for future electronics. |
资助项目 | National Key Research and Development Program of China[2017YFB0406200] ; Key Project of Science and Technology Service Network Initiative of the Chinese Academy of Sciences[KFJ-STS-ZDTP-069] ; Anhui Provincial Natural Science Foundation[1808085QE160] ; CASHIPS Director's Fund[YZJJZX202015] |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
语种 | 英语 |
WOS记录号 | WOS:000619638400079 |
出版者 | AMER CHEMICAL SOC |
资助机构 | National Key Research and Development Program of China ; Key Project of Science and Technology Service Network Initiative of the Chinese Academy of Sciences ; Anhui Provincial Natural Science Foundation ; CASHIPS Director's Fund |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/120358] ![]() |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Zhang, Xian; Wu, Bin; Zeng, Xiaoliang; Tian, Xingyou |
作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Anhui Univ, Sch Chem & Chem Engn, Key Lab Environm Friendly Polymer Mat Anhui Prov, Hefei 230026, Peoples R China 4.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Yanyan,Zhang, Xian,Ding, Xin,et al. Stitching Graphene Sheets with Graphitic Carbon Nitride: Constructing a Highly Thermally Conductive rGO/g-C3N4 Film with Excellent Heating Capability[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13. |
APA | Wang, Yanyan.,Zhang, Xian.,Ding, Xin.,Li, Ya.,Wu, Bin.,...&Tian, Xingyou.(2021).Stitching Graphene Sheets with Graphitic Carbon Nitride: Constructing a Highly Thermally Conductive rGO/g-C3N4 Film with Excellent Heating Capability.ACS APPLIED MATERIALS & INTERFACES,13. |
MLA | Wang, Yanyan,et al."Stitching Graphene Sheets with Graphitic Carbon Nitride: Constructing a Highly Thermally Conductive rGO/g-C3N4 Film with Excellent Heating Capability".ACS APPLIED MATERIALS & INTERFACES 13(2021). |
入库方式: OAI收割
来源:合肥物质科学研究院
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