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2D Silicon-Based Semiconductor Si2Te3 toward Broadband Photodetection

文献类型：期刊论文

作者Chen, Jiawang1; Tan, Chaoyang3,4; Li, Gang3,4; Chen, Lijie3,4; Zhang, Hanlin3,4; Yin, Shiqi3,4; Li, Ming1; Li, Liang2,3,4; Li, Guanghai1
刊名SMALL
出版日期2021-04-01
卷号17
关键词2D materials photodetector Si Te-2 (3) silicon based transistor
ISSN号1613-6810
DOI10.1002/smll.202006496
通讯作者Li, Liang(liangli@ahu.edu.cn) ; Li, Guanghai(ghli@issp.ac.cn)
英文摘要Silicon-based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical-optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next-generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon-based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si2Te3) 2D material, a IV-VI silicon-based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550-1050 nm reveals the intrinsic defects in Si2Te3. The Si2Te3-based field-effect transistors (FETs) and photodetectors show a typical p-type behavior and a remarkable broadband spectral response in the range of 405-1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W-1 and 2.81 x 10(12) Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon-based materials in the field of optoelectronics.
资助项目National Natural Science Foundation of China[51902001] ; Recruitment Program for Leading Talent Team of Anhui Province[2019-16] ; Anhui Provincial Natural Science Foundation[1908085QE17]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000624641400001
出版者WILEY-V C H VERLAG GMBH
资助机构National Natural Science Foundation of China ; Recruitment Program for Leading Talent Team of Anhui Province ; Anhui Provincial Natural Science Foundation
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/120828]  
专题中国科学院合肥物质科学研究院
通讯作者Li, Liang; Li, Guanghai
作者单位1.Univ Sci & Technol China, Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys,Anhui Key Lab Nanomat & Nanotech, Hefei 230031, Peoples R China
2.Anhui Univ, Photoelect Convers Energy Mat & Devices Key Lab A, Hefei 230601, Peoples R China
3.Anhui Univ, Inst Informat Technol, Hefei 230601, Peoples R China
4.Anhui Univ, Inst Phys Sci, Hefei 230601, Peoples R China
推荐引用方式
GB/T 7714		 Chen, Jiawang,Tan, Chaoyang,Li, Gang,et al. 2D Silicon-Based Semiconductor Si2Te3 toward Broadband Photodetection[J]. SMALL,2021,17.
APA Chen, Jiawang.,Tan, Chaoyang.,Li, Gang.,Chen, Lijie.,Zhang, Hanlin.,...&Li, Guanghai.(2021).2D Silicon-Based Semiconductor Si2Te3 toward Broadband Photodetection.SMALL,17.
MLA Chen, Jiawang,et al."2D Silicon-Based Semiconductor Si2Te3 toward Broadband Photodetection".SMALL 17(2021).

入库方式： OAI收割

来源：合肥物质科学研究院

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