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Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing

文献类型：期刊论文

作者Wang, Xinhua2,3; Zhang, Yange1; Huang, Sen2,3; Yin, Haibo2; Fan, Jie2; Wei, Ke2; Zheng, Yingkui2; Wang, Wenwu4; Jiang, Haojie4; Wu, Xuebang1
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2021-02-17
卷号13
ISSN号1944-8244
关键词GaN first-principles formation mechanism of crystallized Si2N2O interface editing LPCVD-SiNx near-conduction band states
DOI10.1021/acsami.0c19483
通讯作者Huang, Sen(huangsen@ime.ac.cn) ; Liu, Xinyu(xyliu@ime.ac.cn)
英文摘要The formation mechanism of the partially crystallized ultrathin layer at the interface between GaN and SiNx grown by low-pressure chemical vapor deposition was analyzed based on the chemical components of reactants and products detected by high-resolution sputter depth profile analysis by X-ray photoelectron spectroscopy. A reasonable mass action equation for the formation of Si2N2O was proposed from the feasibility analysis of the Gibbs free energy changes of the reaction. The high-energyactivated Ga2O on the surface likely assists in the synthesis of the crystallized components. A well-defined 1ML theta-Ga2O3 transition interface was inserted into Si2N2O/GaN pure interface supercell slabs to edit the unsaturated state of the bonds. Low-density states can be achieved when the effective charges of the unsaturated atoms are adjusted to a certain interval.
资助项目National Natural Science Foundation of China[61527816] ; National Natural Science Foundation of China[61534007] ; National Natural Science Foundation of China[61822407] ; National Natural Science Foundation of China[11634002] ; National Natural Science Foundation of China[61631021] ; Chinese Academy of Science (CAS)[QYZDB-SSW-JSC012] ; National Key R&D Program of China[2016YFB0400105] ; National Key R&D Program of China[2017YFB0403000] ; Youth Innovation Promotion Association of CAS ; University of Chinese Academy of Sciences ; Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000621051200074
资助机构National Natural Science Foundation of China ; Chinese Academy of Science (CAS) ; National Key R&D Program of China ; Youth Innovation Promotion Association of CAS ; University of Chinese Academy of Sciences ; Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/120883]  
专题中国科学院合肥物质科学研究院
通讯作者Huang, Sen; Liu, Xinyu
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
2.Chinese Acad Sci, High Frequency High Voltage Device & Integrated C, Inst Microelect, Beijing 100029, Peoples R China
3.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
4.Chinese Acad Sci, Integrated Circuit Adv Proc Ctr, Inst Microelect, Beijing 100029, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Xinhua,Zhang, Yange,Huang, Sen,et al. Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13.
APA Wang, Xinhua.,Zhang, Yange.,Huang, Sen.,Yin, Haibo.,Fan, Jie.,...&Liu, Xinyu.(2021).Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing.ACS APPLIED MATERIALS & INTERFACES,13.
MLA Wang, Xinhua,et al."Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing".ACS APPLIED MATERIALS & INTERFACES 13(2021).

入库方式： OAI收割

来源：合肥物质科学研究院

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