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Gate tunable self-powered few-layer black phosphorus broadband photodetector

文献类型：期刊论文

作者Guo, Xiaofei2; Zhang, Liwen1,3; Chen, Jun1,2; Zheng, Xiaohong3,4; Zhang, Lei1,3
刊名PHYSICAL CHEMISTRY CHEMICAL PHYSICS
出版日期2021-01-07
卷号23
ISSN号1463-9076
DOI10.1039/d0cp05292b
通讯作者Chen, Jun(chenjun@sxu.edu.cn) ; Zhang, Lei(zhanglei@sxu.edu.cn)
英文摘要Utilizing the unique gate induced giant stark effect in few-layer black phosphorus (BP), we theoretically propose a broadband photodetector device based on pure few-layer BP using atomic first-principles calculations. By applying a vertical gate voltage in the few-layer BP, the intrinsic inversion symmetry of the system can be broken. We found that the photocurrent can be generated via the photogalvanic (or photovoltaic) effect (PGE) without the need for an external bias voltage, which means the gated few-layer BP photodetector is self-powered and the dark current can be greatly suppressed. Most importantly, due to the giant stark effect of the gated few-layer BP, the photodetection range can be well controlled and further enlarged from the mid-infrared range (MIR) to the far-infrared range (FIR). Furthermore, the few-layer BP based photodetector device also presents high polarization sensitivity with extinction ratios up to 10(4) and a large anisotropic photoresponse. Our numerical findings pave a feasible way for the few-layer BP's novel application in self-powered and well-controlled broadband photodetectors.
资助项目National Natural Science Foundation of China[11674204] ; National Natural Science Foundation of China[11704232] ; National Natural Science Foundation of China[11974355] ; National Natural Science Foundation of China[12074230] ; National Natural Science Foundation of China[11574318] ; National Key R&D Program of China[2017YFA0304203] ; National Key R&D Program of China[1331KSC] ; Shanxi Province 100-Plan Talent Program ; Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices[KF201810]
WOS研究方向Chemistry ; Physics
语种英语
WOS记录号WOS:000625340900008
出版者ROYAL SOC CHEMISTRY
资助机构National Natural Science Foundation of China ; National Key R&D Program of China ; Shanxi Province 100-Plan Talent Program ; Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/121129]  
专题中国科学院合肥物质科学研究院
通讯作者Chen, Jun; Zhang, Lei
作者单位1.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
2.Shanxi Univ, Inst Theoret Phys, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Shanxi, Peoples R China
3.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Shanxi, Peoples R China
4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Guo, Xiaofei,Zhang, Liwen,Chen, Jun,et al. Gate tunable self-powered few-layer black phosphorus broadband photodetector[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2021,23.
APA Guo, Xiaofei,Zhang, Liwen,Chen, Jun,Zheng, Xiaohong,&Zhang, Lei.(2021).Gate tunable self-powered few-layer black phosphorus broadband photodetector.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,23.
MLA Guo, Xiaofei,et al."Gate tunable self-powered few-layer black phosphorus broadband photodetector".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 23(2021).

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来源：合肥物质科学研究院

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