中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Single crystal growth of GaSe via bismuth flux method and its air-stability

文献类型:期刊论文

作者Chu, Weiwei2,3; Yang, Jiyong2,4; Li, Liang1,2; Zhu, Xiangde2; Tian, Mingliang2,5
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2021-05-15
卷号562
关键词Flux method Semiconductor Two-dimensional materials
ISSN号0022-0248
DOI10.1016/j.jcrysgro.2021.126088
通讯作者Zhu, Xiangde(xdzhu@hmfl.ac.cn) ; Tian, Mingliang(tianml@hmfl.ac.cn)
英文摘要Gallium selenide (GaSe) shows potential applications in photoelectric fields. Herein, we successfully synthesized GaSe single crystal with large size via improved Bi-flux method. X-ray diffraction pattern and energy dispersive spectrum show the high crystallinity and high homogeneity of GaSe crystal. Optical absorption and photo-luminescence measurements illustrate the band gap of the crystal is similar to 2 eV. Photocurrent behavior demonstrates the photoelectric response time is determined to be 2.08 s. The time dependent Raman spectrum shows that GaSe grown by Bi-flux method degenerates slowly under continuous air-exposure. This effective new growth method would be helpful for photoelectric device and two-dimensional materials study based on GaSe.
资助项目Youth Innovation Promotion Association of CAS[2017483] ; National Natural Science Foundation of China[U2032163] ; National Natural Science Foundation of China[U19A2093] ; National Natural Science Foundation of China[U1732274] ; Collaboration Innovation Program of Hefei Science Center, CAS[2019HSC-CIP 001] ; High Magnetic Field Laboratory of Anhui Province
WOS研究方向Crystallography ; Materials Science ; Physics
语种英语
WOS记录号WOS:000634966900002
出版者ELSEVIER
资助机构Youth Innovation Promotion Association of CAS ; National Natural Science Foundation of China ; Collaboration Innovation Program of Hefei Science Center, CAS ; High Magnetic Field Laboratory of Anhui Province
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/121515]  
专题中国科学院合肥物质科学研究院
通讯作者Zhu, Xiangde; Tian, Mingliang
作者单位1.Anhui Univ, Inst Phys Sci & Informat Technol, Minist Educ, Key Lab Struct & Funct Regulat Hybrid Mat, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China
3.Univ Sci & Technol China, Hefei 230031, Anhui, Peoples R China
4.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
5.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
推荐引用方式
GB/T 7714
Chu, Weiwei,Yang, Jiyong,Li, Liang,et al. Single crystal growth of GaSe via bismuth flux method and its air-stability[J]. JOURNAL OF CRYSTAL GROWTH,2021,562.
APA Chu, Weiwei,Yang, Jiyong,Li, Liang,Zhu, Xiangde,&Tian, Mingliang.(2021).Single crystal growth of GaSe via bismuth flux method and its air-stability.JOURNAL OF CRYSTAL GROWTH,562.
MLA Chu, Weiwei,et al."Single crystal growth of GaSe via bismuth flux method and its air-stability".JOURNAL OF CRYSTAL GROWTH 562(2021).

入库方式: OAI收割

来源:合肥物质科学研究院

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