Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition
文献类型：期刊论文
| 作者 | Fan, Zihao2; Zhu, Min3; Pan, Shusheng1,2 ; Ge, Jun1,2; Hu, Ling3
|
| 刊名 | CERAMICS INTERNATIONAL
 |
| 出版日期 | 2021-05-15 |
| 卷号 | 47 |
| 关键词 | Ni doping Photoelectric performance Photo electrode |
| ISSN号 | 0272-8842 |
| DOI | 10.1016/j.ceramint.2021.01.226 |
| 通讯作者 | Pan, Shusheng(sspan@gzhu.edu.cn) ; Ge, Jun(speegejun510@gzhu.edu.cn) ; Hu, Ling(huling@issp.ac.cn) |
| 英文摘要 | In this study, Cr2O3 and Ni-doped Cr2O3 (Cr2O3: Ni) thin film was deposited on sapphire substrate by pulsed laser deposition. The photoresponse properties of the Au/Cr2O3/Au and Au/Cr2O3: Ni/Au thin film have been investigated. After Ni doping, the photoresponse performance of Cr2O3 film has dramatically enhanced in the wavelength range from 1064 to 365 nm, and the responsivity of Cr2O3 films is increased from 0.357 to 154 ?A/W under 365 nm UV light irradiation, i.e. more than 400 times enhancement. Furthermore, the rise/fall times of photodetector is reduced from 32.3 s/12.1 s?9.51 s/9.85 s after Ni doping. The responsivity of Cr2O3: Ni films is higher than c.a.10 ?A/W during the whole visible light range. In addition, the photocurrent of Ni-doped Cr2O3 photocathode for water-splitting is enhanced from 0.3 to 19 nA/cm2. The high performance photoresponse properties promote Cr2O3: Ni film as a promising candidate for applications in solar cells and photo electrodes. |
| 资助项目 | National Natural Science Foundation of China[51872054] ; Department of Education of Guangdong Province[2018KZDXM052] ; Department of Education of Guangdong Province[2017KQNCX152] ; Startup Funds of Guangzhou University[6918ZX10051] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000638267800009 |
| 出版者 | ELSEVIER SCI LTD |
| 资助机构 | National Natural Science Foundation of China ; Department of Education of Guangdong Province ; Startup Funds of Guangzhou University |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/121738]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Pan, Shusheng; Ge, Jun; Hu, Ling |
| 作者单位 | 1.Guangzhou Univ, Res Ctr Adv Informat Mat CAIM, Huangpu Res & Grad Sch, Sino Singapore Guangzhou Knowledge City, Guangzhou 510555, Peoples R China 2.Guangzhou Univ, Sch Phys & Mat Sci, Guangzhou 510006, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fan, Zihao,Zhu, Min,Pan, Shusheng,et al. Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition[J]. CERAMICS INTERNATIONAL,2021,47. |
| APA | Fan, Zihao,Zhu, Min,Pan, Shusheng,Ge, Jun,&Hu, Ling.(2021).Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition.CERAMICS INTERNATIONAL,47. |
| MLA | Fan, Zihao,et al."Giant photoresponse enhancement in Cr2O3 films by Ni doping-induced insulator-to-semiconductor transition".CERAMICS INTERNATIONAL 47(2021). |
入库方式： OAI收割
来源：合肥物质科学研究院
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