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An electrically switchable anti-ferroelectric bilayer In2Se3 based opto-spintronic device

文献类型：期刊论文

作者Yang, Yaqing3,4; Zhang, Liwen3,4; Chen, Jun1,4; Zheng, Xiaohong2,3; Zhang, Lei3,4; Xiao, Liantuan3,4; Jia, Suotang3,4
刊名NANOSCALE
出版日期2021-04-29
ISSN号2040-3364
DOI10.1039/d1nr00369k
通讯作者Zheng, Xiaohong(xhzheng@theory.issp.ac.cn) ; Zhang, Lei(zhanglei@sxu.edu.cn)
英文摘要Based on non-equilibrium Green's function combined with density functional theory (NEGF-DFT), we theoretically investigate the spin-related photogalvanic effect (PGE) in two anti-ferroelectric bilayer In2Se3 structures by atomic first-principles calculations. It is found that, due to the absence of inversion symmetry and the presence of strong spin-orbital interaction (SOI) in anti-ferroelectric bilayer In2Se3, the photoinduced charge-to-spin conversion can be achieved via the PGE. The generated spin-dependent photocurrent is largely spin-polarized and the corresponding spin polarization can vary from 0% to 100% depending on the photon energies, polarization and incident angles. Furthermore, it is found that, by tuning the polarization and the incident angles of light, the fully spin-polarized and pure spin photocurrent can be obtained. Most importantly, the spin dependent photocurrent can be largely tuned through the transition between two anti-ferroelectric bilayer In2Se3 states by the gate voltage. The defined relative spin dependent photoresponse change ratio n(s) between two states is extremely large and its maximum value can be in the order of similar to 10(4). Therefore, our work demonstrates the great potential of bilayer In2Se3's novel application in two-dimensional non-volatile opto-spintronic devices.
资助项目National Natural Science Foundation of China[12074230] ; National Natural Science Foundation of China[11974355] ; National Key R&D Program of China[2017YFA0304203] ; National Key R&D Program of China[1331KSC] ; Shanxi Province 100-Plan Talent Program
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者ROYAL SOC CHEMISTRY
WOS记录号WOS:000645105600001
资助机构National Natural Science Foundation of China ; National Key R&D Program of China ; Shanxi Province 100-Plan Talent Program
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/121998]  
专题中国科学院合肥物质科学研究院
通讯作者Zheng, Xiaohong; Zhang, Lei
作者单位1.Shanxi Univ, Inst Theoret Phys, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
2.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
3.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
4.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
推荐引用方式
GB/T 7714		 Yang, Yaqing,Zhang, Liwen,Chen, Jun,et al. An electrically switchable anti-ferroelectric bilayer In2Se3 based opto-spintronic device[J]. NANOSCALE,2021.
APA Yang, Yaqing.,Zhang, Liwen.,Chen, Jun.,Zheng, Xiaohong.,Zhang, Lei.,...&Jia, Suotang.(2021).An electrically switchable anti-ferroelectric bilayer In2Se3 based opto-spintronic device.NANOSCALE.
MLA Yang, Yaqing,et al."An electrically switchable anti-ferroelectric bilayer In2Se3 based opto-spintronic device".NANOSCALE (2021).

入库方式： OAI收割

来源：合肥物质科学研究院

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