High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm
文献类型:期刊论文
作者 | Liu, Yuxian1,2; Yang, Guowen1,2,3; Wang, Zhenfu1; Li, Te1; Tang, Song3; Zhao, Yuliang1,2; Lan, Yu1,2; Demir, Abdullah4 |
刊名 | Optics and Laser Technology |
出版日期 | 2021-09 |
卷号 | 141 |
ISSN号 | 00303992 |
关键词 | Semiconductor laser Diode laser High power High efficiency Low divergence angle High brightness 976 nm |
DOI | 10.1016/j.optlastec.2021.107145 |
产权排序 | 1 |
英文摘要 | Broad-area diode lasers with high output power and low lateral divergence angle are highly desired for extensive scientific and industrial applications. Here, we report on the epitaxial design for higher output power and a flared waveguide design for reduced divergence, which leads to high power operation with a low lateral divergence angle. A vertically asymmetric epitaxial structure was employed and optimized for low internal optical loss and high efficiency to realize high output power operation. Using a flared waveguide design, the lateral divergence angle was efficiently reduced by decreasing the number of high-order lateral optical modes significantly. The flared waveguide design introduces a smooth modification of the ridge width along the cavity without deteriorating laser performance. Based on the optimized epitaxial and waveguide design, we scaled the waveguide width to realize high continuous-wave power of 34.5 W at 25 °C. A low lateral divergence angle of 8° and high power conversion efficiency of 60% were achieved at the operating power level of 25 W. The life test data (30 A at 45 °C for 39 units, 0 failures in 1000 h) demonstrated reliable operation illustrating the efficient design for reduced lateral divergence angle and high operating power. © 2021 Elsevier Ltd |
语种 | 英语 |
出版者 | Elsevier Ltd |
源URL | [http://ir.opt.ac.cn/handle/181661/94709] |
专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
通讯作者 | Yang, Guowen |
作者单位 | 1.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an; 710119, China; 2.University of Chinese Academy of Sciences, Beijing; 100049, China; 3.Dogain Laser Technology (Suzhou) Co., Ltd., Suzhou; 215123, China; 4.Bilkent University, UNAM - Institute of Materials Science and Nanotechnology, Ankara; 06800, Turkey |
推荐引用方式 GB/T 7714 | Liu, Yuxian,Yang, Guowen,Wang, Zhenfu,et al. High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm[J]. Optics and Laser Technology,2021,141. |
APA | Liu, Yuxian.,Yang, Guowen.,Wang, Zhenfu.,Li, Te.,Tang, Song.,...&Demir, Abdullah.(2021).High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm.Optics and Laser Technology,141. |
MLA | Liu, Yuxian,et al."High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm".Optics and Laser Technology 141(2021). |
入库方式: OAI收割
来源:西安光学精密机械研究所
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