中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading

文献类型:期刊论文

作者Yingbin Zhu;   Huihui Wen;   Hongye Zhang;   Zhanwei Liu;   Chao Liu;   Shuman Liu
刊名APPLIED SURFACE SCIENCE
出版日期2020
卷号515页码:145934
源URL[http://ir.semi.ac.cn/handle/172111/30227]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Yingbin Zhu; Huihui Wen; Hongye Zhang; Zhanwei Liu; Chao Liu; Shuman Liu. Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading[J]. APPLIED SURFACE SCIENCE,2020,515:145934.
APA Yingbin Zhu; Huihui Wen; Hongye Zhang; Zhanwei Liu; Chao Liu; Shuman Liu.(2020).Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading.APPLIED SURFACE SCIENCE,515,145934.
MLA Yingbin Zhu; Huihui Wen; Hongye Zhang; Zhanwei Liu; Chao Liu; Shuman Liu."Real-time in situ observation of extended defect evolution near a crack tip in GaSb crystal under thermal loading".APPLIED SURFACE SCIENCE 515(2020):145934.

入库方式: OAI收割

来源:半导体研究所

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