Theoretical Analysis of Strain-Optoelectronic Properties in Externally Deformed Ge/GeSi Quantum Well Nanomembranes via Neutral Plane Modulation
文献类型：期刊论文
| 作者 | Jiushuang Zhang; Yun Xu; Weitong Wu; Wei Lu; Guofeng Song |
| 刊名 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
 |
| 出版日期 | 2020 |
| 卷号 | 257期号:8页码:1900732 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30288]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Jiushuang Zhang; Yun Xu; Weitong Wu; Wei Lu; Guofeng Song. Theoretical Analysis of Strain-Optoelectronic Properties in Externally Deformed Ge/GeSi Quantum Well Nanomembranes via Neutral Plane Modulation[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2020,257(8):1900732. |
| APA | Jiushuang Zhang; Yun Xu; Weitong Wu; Wei Lu; Guofeng Song.(2020).Theoretical Analysis of Strain-Optoelectronic Properties in Externally Deformed Ge/GeSi Quantum Well Nanomembranes via Neutral Plane Modulation.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,257(8),1900732. |
| MLA | Jiushuang Zhang; Yun Xu; Weitong Wu; Wei Lu; Guofeng Song."Theoretical Analysis of Strain-Optoelectronic Properties in Externally Deformed Ge/GeSi Quantum Well Nanomembranes via Neutral Plane Modulation".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 257.8(2020):1900732. |
入库方式： OAI收割
来源：半导体研究所
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