High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer
文献类型：期刊论文
| 作者 | Jianliang Huang; Chengcheng Zhao; Biying Nie; Shiyu Xie; Dominic C. M. Kwan; Xiao Meng; Yanhua Zhang; Diana L. Huffaker; Wenquan Ma |
| 刊名 | PHOTONICS RESEARCH
 |
| 出版日期 | 2020 |
| 卷号 | 8期号:5页码:755-759 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30367]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jianliang Huang; Chengcheng Zhao; Biying Nie; Shiyu Xie; Dominic C. M. Kwan; Xiao Meng; Yanhua Zhang; Diana L. Huffaker; Wenquan Ma. High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer[J]. PHOTONICS RESEARCH,2020,8(5):755-759. |
| APA | Jianliang Huang; Chengcheng Zhao; Biying Nie; Shiyu Xie; Dominic C. M. Kwan; Xiao Meng; Yanhua Zhang; Diana L. Huffaker; Wenquan Ma.(2020).High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer.PHOTONICS RESEARCH,8(5),755-759. |
| MLA | Jianliang Huang; Chengcheng Zhao; Biying Nie; Shiyu Xie; Dominic C. M. Kwan; Xiao Meng; Yanhua Zhang; Diana L. Huffaker; Wenquan Ma."High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer".PHOTONICS RESEARCH 8.5(2020):755-759. |
入库方式： OAI收割
来源：半导体研究所
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