The Optical Absorption and Photoluminescence Characteristics of Evaporated and IAD HfO2 Thin Films
文献类型：期刊论文
| 作者 | Kong, Mingdong3; Li, Bincheng2; Guo, Chun; Zeng, Peng; Wei, Ming; He, Wenyan3 |
| 刊名 | COATINGS
 |
| 出版日期 | 2019-05-01 |
| 卷号 | 9期号:5 |
| 关键词 | HfO2 thin films optical absorption photoluminescence electron-beam deposition ion-assisted deposition (IAD) |
| ISSN号 | 2079-6412 |
| DOI | 10.3390/coatings9050307 |
| 文献子类 | 期刊论文 |
| 英文摘要 | HfO2 thin films are extensively applied in optical coatings and microelectronic devices. However, film defects, which are vital to the performance of the thin films, are still under intense investigation. In this work, the absorption, photoluminescence, and crystallization characteristics of HfO2 films prepared by electron-beam evaporation and ion-assisted deposition are investigated in detail. Experimental results showed that high-temperature thermal annealing in air resulted in a reduced absorption coefficient, an increased bandgap width, and an increased degree of crystallization. After thermal annealing, an absorption shoulder near 5.8 eV was caused by excitons in the films, which were independent of oxygen vacancy defects and crystallization. Under 6.4 eV (193 nm) laser excitation, the photoluminescence spectrum showed five emission peaks for HfO2 films both with and without thermal annealing. The emission peak near 4.4 eV was generated by the self-trapped exciton, and the peak near 4.0 eV was related to the OH group in the film. The oxygen vacancy defect-induced absorption of HfO2 films in a broad spectral range significantly increased when HfO2 film was re-annealed in Ar gas after first being annealed in air, while the photoluminescence spectrum showed no significant change, indicating that the emission peaks at 2.3, 2.8, and 3.4 eV were not related to oxygen vacancy defects. |
| 出版地 | BASEL |
| WOS关键词 | LUMINESCENCE ; DEPOSITION ; DEFECTS ; STRESS ; HAFNIA |
| WOS研究方向 | Materials Science, Coatings & Films |
| 语种 | 英语 |
| WOS记录号 | WOS:000478810800028 |
| 出版者 | MDPI |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/9686]  |
| 专题 | 光电技术研究所_薄膜光学技术研究室（十一室） |
| 作者单位 | 1.Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China 2.Chinese Acad Sci, Beijing 100039, Peoples R China 3.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Kong, Mingdong,Li, Bincheng,Guo, Chun,et al. The Optical Absorption and Photoluminescence Characteristics of Evaporated and IAD HfO2 Thin Films[J]. COATINGS,2019,9(5). |
| APA | Kong, Mingdong,Li, Bincheng,Guo, Chun,Zeng, Peng,Wei, Ming,&He, Wenyan.(2019).The Optical Absorption and Photoluminescence Characteristics of Evaporated and IAD HfO2 Thin Films.COATINGS,9(5). |
| MLA | Kong, Mingdong,et al."The Optical Absorption and Photoluminescence Characteristics of Evaporated and IAD HfO2 Thin Films".COATINGS 9.5(2019). |
入库方式： OAI收割
来源：光电技术研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。