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Plasmonic Interference Lithography for Low-Cost Fabrication of Dense Lines with Sub-50 nm Half-Pitch

文献类型：期刊论文

作者Kong, Weijie1,2; Luo, Yunfei1,2; Zhao, Chengwei1,2; Liu, Ling1,2; Gao, Ping1; Pu, Mingbo1,2; Wang, Changtao1,2; Luo, Xiangang1,2
刊名ACS Applied Nano Materials
出版日期2019-01-25
卷号2期号:1页码:489-496
关键词interference lithography surface plasmonic optical waveguide near-field diffraction limit super resolution nanomanufacturing subwavelength optics
ISSN号2574-0970
DOI10.1021/acsanm.8b02047
文献子类期刊论文
英文摘要Limited by the cost and complexity, a sub-50 nm lithography node is hard to achieve through the traditional interference lithography. In this paper, the dense lines with half-pitch of 32 nm (∼λ/11) and 22 nm (∼λ/16) are first achieved at the wavelength of 365 nm by simple plasmonic interference lithography. Through selecting the high spatial frequency plasmonic modes in Al/Photoresist (Pr)/Al waveguide and allowing interference with each other, the deep subwavelength plasmonic interference field could be obtained in Pr film. Moreover, the lithography structure is separated from the mask, so etch transfer process from Pr to substrate after lithography is easy to attain, and the mask with high cost could be used multiple times. Meanwhile, a near-field lithography setup was developed, and we experimentally realized the comparatively distinct lithography fringes with the half-pitch of 32 and 22 nm when there is an air gap smaller than ∼20 nm between mask and the lithography films. Compared with the imaging lithography with 1:1 ratio, the plasmonic interference lithography could achieve the demagnified patterns with a 2:1 ratio, which reduces the difficulty and cost of the mask fabrication. It is believed that this method will supply the simple and low-cost nanofabrication scenario in the near future. © 2019 American Chemical Society.
WOS关键词LARGE-AREA ; ULTRAVIOLET ; EUV
WOS研究方向Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
语种英语
WOS记录号WOS:000464491500053
出版者American Chemical Society
源URL[http://ir.ioe.ac.cn/handle/181551/9644]  
专题光电技术研究所_微细加工光学技术国家重点实验室（开放室）
作者单位1.State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu; 610209, China;
2.University of Chinese Academy of Sciences, Beijing; 100049, China
推荐引用方式
GB/T 7714		 Kong, Weijie,Luo, Yunfei,Zhao, Chengwei,et al. Plasmonic Interference Lithography for Low-Cost Fabrication of Dense Lines with Sub-50 nm Half-Pitch[J]. ACS Applied Nano Materials,2019,2(1):489-496.
APA Kong, Weijie.,Luo, Yunfei.,Zhao, Chengwei.,Liu, Ling.,Gao, Ping.,...&Luo, Xiangang.(2019).Plasmonic Interference Lithography for Low-Cost Fabrication of Dense Lines with Sub-50 nm Half-Pitch.ACS Applied Nano Materials,2(1),489-496.
MLA Kong, Weijie,et al."Plasmonic Interference Lithography for Low-Cost Fabrication of Dense Lines with Sub-50 nm Half-Pitch".ACS Applied Nano Materials 2.1(2019):489-496.

入库方式： OAI收割

来源：光电技术研究所

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