The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition
文献类型：期刊论文
| 作者 | Tang, Ping2,3; Wang, Weimin2,3; Li, Bing; Feng, Lianghuan; Zeng, Guanggen |
| 刊名 | COATINGS
 |
| 出版日期 | 2019-02-01 |
| 卷号 | 9期号:2 |
| 关键词 | AlSb:Zn films decreased band gap deliquescence PN junction |
| ISSN号 | 2079-6412 |
| DOI | 10.3390/coatings9020136 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at similar to 107 and similar to 142 cm(-1) and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device. |
| 出版地 | BASEL |
| WOS关键词 | OPTICAL-PROPERTIES ; GROWTH |
| WOS研究方向 | Materials Science, Coatings & Films |
| 语种 | 英语 |
| WOS记录号 | WOS:000460700700074 |
| 出版者 | MDPI |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/9685]  |
| 专题 | 光电技术研究所_微细加工光学技术国家重点实验室（开放室） |
| 作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, POB 350, Chengdu 610209, Sichuan, Peoples R China 2.Guilin Univ Elect Technol, Guangxi Key Lab Automat Detecting Technol & Instr, Guilin 541004, Peoples R China 3.Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang, Ping,Wang, Weimin,Li, Bing,et al. The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition[J]. COATINGS,2019,9(2). |
| APA | Tang, Ping,Wang, Weimin,Li, Bing,Feng, Lianghuan,&Zeng, Guanggen.(2019).The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition.COATINGS,9(2). |
| MLA | Tang, Ping,et al."The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition".COATINGS 9.2(2019). |
入库方式： OAI收割
来源：光电技术研究所
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