Gas flow simulation research on reaction chamber of reactive ion etching
文献类型：会议论文
| 作者 | Zhang, Jingwen1,2,3,4; Bin, Fan2; Li, Zhiwei2; Liu, Xin2; Li, Bincheng3; Yu, Han2; Chang, Gong1,2 |
| 出版日期 | 2019 |
| 会议日期 | June 26, 2018 - June 29, 2018 |
| 会议地点 | Chengdu, China |
| 卷号 | 10841 |
| DOI | 10.1117/12.2512222 |
| 页码 | 108410G |
| 英文摘要 | Gas flow distribution of reaction chamber of reactive ion etching (RIE) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, Fluent(Ansys), the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow (50∼250sccm) inlet conditions, and the influence of the different GAP (L = 0.03∼0.06m) of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the GAP of the chamber. © 2019 SPIE. |
| 会议录 | Proceedings of SPIE 10841 - 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics
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| 会议录出版者 | SPIE |
| 文献子类 | 会议论文 |
| 语种 | 英语 |
| ISSN号 | 0277-786X |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/9619]  |
| 专题 | 薄膜光学相机总体室 |
| 作者单位 | 1.University of Chinese Academy of Sciences, Beijing; 100049, China; 2.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu; 610209, China; 3.School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu; 610054, China; 4.School of Energy and Power Engineering, Lanzhou University of Technology, Lan Zhou; 730050, China |
| 推荐引用方式 GB/T 7714 | Zhang, Jingwen,Bin, Fan,Li, Zhiwei,et al. Gas flow simulation research on reaction chamber of reactive ion etching[C]. 见:. Chengdu, China. June 26, 2018 - June 29, 2018. |
入库方式： OAI收割
来源：光电技术研究所
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