Growth process and mechanism of SiC layer deposited by CVD method at normal atmosphere
文献类型：期刊论文
| 作者 | Yang, X; Zhang, F; You, Y; Guo, MS; Zhong, YJ; Wang, P; Lin, J; Zhu, ZY; Zhu, LB |
| 刊名 | JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
 |
| 出版日期 | 2019 |
| 卷号 | 39期号:15页码:4495-4500 |
| 关键词 | SILICON-CARBIDE MICROSTRUCTURE PRESSURE COATINGS METHYLTRICHLOROSILANE SUBSTRATE FILMS RESISTANCE NANOWIRES OXIDATION |
| ISSN号 | 0955-2219 |
| DOI | 10.1016/j.jeurceramsoc.2019.07.022 |
| 文献子类 | 期刊论文 |
| 英文摘要 | The growth process and its mechanism have a significant effect on the microstructure and properties of SiC layers. In this study, we investigated the growth process and microstructure of SiC coating layers fabricated at normal atmospheric pressure under various temperatures based on the structure of the SiC layers and powders. The structure of these samples obtained from tail gas is related to changes in the growth process. SiC nano particles and nanowires from tail gas indicate that SiC can nucleate and grow not only on substrates but also in a gaseous environment. Our results also indicate that the fusion of liquid droplets and the growth of SiC crystals are the main processes governing the formation of the SiC layer at low temperature and high temperature, respectively. Hence, different growth processes lead to variations in the SiC layer properties. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/32074]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Appl Phys, Ctr Excellence TMSR Energy Syst, Shanghai 201800, Peoples R China; 3.Shanghai Nucl Engn Res & Design Inst Co Ltd, Shanghai, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, X,Zhang, F,You, Y,et al. Growth process and mechanism of SiC layer deposited by CVD method at normal atmosphere[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2019,39(15):4495-4500. |
| APA | Yang, X.,Zhang, F.,You, Y.,Guo, MS.,Zhong, YJ.,...&Zhu, LB.(2019).Growth process and mechanism of SiC layer deposited by CVD method at normal atmosphere.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,39(15),4495-4500. |
| MLA | Yang, X,et al."Growth process and mechanism of SiC layer deposited by CVD method at normal atmosphere".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 39.15(2019):4495-4500. |
入库方式： OAI收割
来源：上海应用物理研究所
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