Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu-In-Te Systems
文献类型：期刊论文
| 作者 | Ren, T; Han, ZK; Ying, PZ; Li, X; Li, XY; Lin, XY; Sarker, D; Cui, JL |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2019 |
| 卷号 | 11期号:35页码:32192-32199 |
| 关键词 | THERMAL-CONDUCTIVITY PERFORMANCE BAND ELECTRON CUINTE2 SCATTERING IMPROVEMENT CUGATE2 VACANCY FIGURE |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/acsami.9b12256 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Thermoelectric materials are of imperative need on account of the worldwide energy crisis. However, their efficiency is limited by the interplay of high electrical and lower thermal conductivities, that is, the figure of merit (ZT). Owing to their unique crystal structures, Cu-In-Te-based chalcogenides are suitable for both and thus have attracted much attention recently as potential thermoelectrics. Here we explore a newly developed Cu-In-Te derivative compound Cu3.52In4.16Te8. With a proper adjustment of Cu-2 Te doping, this material shows an ultralow lattice thermal conductivity (kappa(L)) (0.3 WK-1 m(-1)) and, consequently, a figure of merit (ZT) as high as 1.65(+/- 0.15) at 815 K: the highest value reported for p-type Cu-In-Te to date. The reduction in kappa(L) is directly related to the alteration of local symmetry around the interstitial Te, resulting in an effectively optimized phonon transport through localized "rattling" of the same. Although the Hall carrier concentration reduces upon Cu-2 Te addition due to the unpinning of the Fermi level (E-Fermi) toward the conduction band minimum, the power factor remains stable. The knowledge depicted here not only demonstrates the potential of Cu3.52In4.16Te8-based alloys as a promising TE, but also provides guidelines for developing further highperformance thermoelectric materials by enhancing the electronic conductivity. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/32120]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Appl Phys, Div Interfacial Water, Shanghai 201800, Peoples R China; 3.China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Jiangsu, Peoples R China; 4.Ningbo Univ Technol, Sch Mat & Chem Engn, Ningbo 315211, Zhejiang, Peoples R China; 5.Max Planck Gesell, Fritz Haber Inst, Theory Dept, Faradayweg 4-6, D-14195 Berlin, Germany 6.Duke Univ, Dept Mech Engn & Mat Sci, Durham, NC 27708 USA; |
| 推荐引用方式 GB/T 7714 | Ren, T,Han, ZK,Ying, PZ,et al. Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu-In-Te Systems[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(35):32192-32199. |
| APA | Ren, T.,Han, ZK.,Ying, PZ.,Li, X.,Li, XY.,...&Cui, JL.(2019).Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu-In-Te Systems.ACS APPLIED MATERIALS & INTERFACES,11(35),32192-32199. |
| MLA | Ren, T,et al."Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu-In-Te Systems".ACS APPLIED MATERIALS & INTERFACES 11.35(2019):32192-32199. |
入库方式： OAI收割
来源：上海应用物理研究所
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