PbI2-MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment
文献类型：期刊论文
| 作者 | Xiao, JT; Liu, JX; Sun, K; Zhao, Y; Shao, ZY; Liu, XL; Yuan, YB; Li, YZ; Xie, HP; Song, F |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY LETTERS
 |
| 出版日期 | 2019 |
| 卷号 | 10期号:15页码:4203-4208 |
| 关键词 | PEROVSKITE SOLAR-CELLS TEMPERATURE-DEPENDENCE PBI2 FLAKES GRAPHENE HETEROSTRUCTURE PHOTODETECTORS MONOLAYER GAP |
| ISSN号 | 1948-7185 |
| DOI | 10.1021/acs.jpclett.9b01665 |
| 文献子类 | 期刊论文 |
| 英文摘要 | van der Waals (vdW) epitaxy offers a promising strategy without lattice and processing constraints to prepare atomically clean and electronically sharp interfaces for fundamental studies and electronic device demonstrations. Herein, PbI2 was thermally deposited at high-vacuum conditions onto CVD-grown monolayer MoS2 flakes in a vdW epitaxial manner to form 3D-2D heterojunctions, which are promising for vdW epitaxial growth of perovskite films. X-ray diffraction, X-ray photoemission spectroscopy, Raman, and atomic force microscopy measurements reveal the structural properties of the high-quality heterojunctions. Photoluminescence (PL) measurements reveal that the PL emissions from the bottom MoS2 flakes are greatly quenched compared to their as-grown counterparts, which can be ascribed to the band alignment-induced distinct interfacial charge-transfer behaviors. Strong interlayer excitons can be detected at the PbI2/MoS2 interface, indicating an effective type II band alignment, which can be further confirmed by ultraviolet photoemission spectroscopy measurements. The results provide a new material platform for the application of the vdW heterojunctions in electronic and optoelectronic devices. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/32156]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai 201204, Peoples R China; 3.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA |
| 推荐引用方式 GB/T 7714 | Xiao, JT,Liu, JX,Sun, K,et al. PbI2-MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2019,10(15):4203-4208. |
| APA | Xiao, JT.,Liu, JX.,Sun, K.,Zhao, Y.,Shao, ZY.,...&Huang, H.(2019).PbI2-MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,10(15),4203-4208. |
| MLA | Xiao, JT,et al."PbI2-MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 10.15(2019):4203-4208. |
入库方式： OAI收割
来源：上海应用物理研究所
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