中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Quasiepitaxy Strategy for Efficient Full-Inorganic Sb2S3 Solar Cells

文献类型:期刊论文

作者Deng, H; Zeng, YY; Ishaq, M; Yuan, SJ; Zhang, H; Yang, XK; Hou, MM; Farooq, U; Huang, JL; Sun, KW
刊名ADVANCED FUNCTIONAL MATERIALS
出版日期2019
卷号29期号:31页码:-
关键词OPTICAL-PROPERTIES LAYER TIO2
ISSN号1616-301X
DOI10.1002/adfm.201901720
文献子类期刊论文
英文摘要Antimony sulfide (Sb2S3) as a wide-bandgap, nontoxic, and stable photovoltaic material reveals great potential for the uppermost cells in Si-based tandem cell stacks. Sb2S3 solar cells with a compatible process, acceptable cost, and high efficiency therefore become the mandatory prerequisites to match silicon bottom cells. The performance of vacuum processed Sb2S3 device is pinned by bulk and interfacial recombination. Herein, a thermally treated TiO2 buffer layer induces quasiepitaxial growth of vertical orientation Sb2S3 absorber overcoming interface defects and absorber transport loss. Such novel growth could pronouncedly improve the open-circuit voltage (V-oc) due to the superior interface quality and intraribbon transport. The epitaxial rough Sb2S3 surface shows a texturized-like morphology. It is optimized by tuning the grain sizes to form strong light trapping effect, which further enhances the short-circuit current density (J(sc)) with a 16% improvement. The final optimal device with high stability obtains a power conversion efficiency of 5.4%, which is the best efficiency for full-inorganic Sb2S3 solar cells. The present developed quasiepitaxy strategy supports a superior interface, vertical orientation, and surface light trapping effect, which provides a new perspective for efficient noncubic material thin film solar cells.
语种英语
源URL[http://ir.sinap.ac.cn/handle/331007/32176]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位1.Huazhong Univ Sci & Technol, Shenzhen R&D Ctr, Shenzhen 518000, Peoples R China;
2.HUST, WNLO, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China;
3.HUST, Sch Opt & Elect Informat, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China;
4.Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia;
5.HUST, SOEI, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China;
6.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai, Peoples R China
推荐引用方式
GB/T 7714
Deng, H,Zeng, YY,Ishaq, M,et al. Quasiepitaxy Strategy for Efficient Full-Inorganic Sb2S3 Solar Cells[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(31):-.
APA Deng, H.,Zeng, YY.,Ishaq, M.,Yuan, SJ.,Zhang, H.,...&Tang, J.(2019).Quasiepitaxy Strategy for Efficient Full-Inorganic Sb2S3 Solar Cells.ADVANCED FUNCTIONAL MATERIALS,29(31),-.
MLA Deng, H,et al."Quasiepitaxy Strategy for Efficient Full-Inorganic Sb2S3 Solar Cells".ADVANCED FUNCTIONAL MATERIALS 29.31(2019):-.

入库方式: OAI收割

来源:上海应用物理研究所

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