Regulation of the Crystal Structure Leading to the Bandgap Widening and Phonon Scattering Increasing in Cu3SnS4-Cu3SbSe3 Chalcogenides
文献类型：期刊论文
| 作者 | Zhao, LL; Lin, NM; Han, ZK; Li, X; Wang, HY; Cui, JL |
| 刊名 | ADVANCED ELECTRONIC MATERIALS
 |
| 出版日期 | 2019 |
| 卷号 | 5期号:10页码:- |
| 关键词 | ENHANCED THERMOELECTRIC PERFORMANCE LATTICE THERMAL-CONDUCTIVITY PERIPHERAL PHONONS DEFECTS |
| ISSN号 | 2199-160X |
| DOI | 10.1002/aelm.201900485 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Cu3SnS4 chalcogenide as a low-cost, earth abundant thermoelectric material has recently attracted much attention. However, its Seebeck coefficient is rather low due to its metallic-like behavior; therefore, substantial work is required to enhance its thermoelectric (TE) properties. In this work, an alternative method is proposed, that is, a regulation of the crystal structure through alloying with Cu3SbSe3. This regulation is realized by the incorporation of Sb and Se in the Cu3SnS4 host frame with an addition of Cu3SbSe3, thus altering the bond lengths (Cu Symbol of the Klingon Empire S and Sn Symbol of the Klingon Empire S) and bond angles (S Symbol of the Klingon Empire Cu Symbol of the Klingon Empire S and S Symbol of the Klingon Empire Sn Symbol of the Klingon Empire S), and leading to widening of the bandgap and the convergence of top valence bands. At the same time, the lattice thermal conductivity reduces by approximate to 50% at high temperatures, mainly triggered by the crystal structure distortion and introduced point defects. The approach of crystal structure regulation may help design the properties of other ternary Cu Symbol of the Klingon Empire Sn(Sb) Symbol of the Klingon Empire S(Se) compounds for TE applications. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/32185]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Fritz Haber Inst Max Planck Gesell, Faradayweg 4-6, D-14195 Berlin, Germany 2.Taiyuan Univ Technol, Mat Sci & Engn Coll, Taiyuan 030024, Shanxi, Peoples R China; 3.Ningbo Univ OfTechnol, Sch Mat & Chem Engn, Ningbo 315211, Zhejiang, Peoples R China; 4.Chinese Acad Sci, Shanghai Inst Appl Phys, Div Interfacial Water, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China; |
| 推荐引用方式 GB/T 7714 | Zhao, LL,Lin, NM,Han, ZK,et al. Regulation of the Crystal Structure Leading to the Bandgap Widening and Phonon Scattering Increasing in Cu3SnS4-Cu3SbSe3 Chalcogenides[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(10):-. |
| APA | Zhao, LL,Lin, NM,Han, ZK,Li, X,Wang, HY,&Cui, JL.(2019).Regulation of the Crystal Structure Leading to the Bandgap Widening and Phonon Scattering Increasing in Cu3SnS4-Cu3SbSe3 Chalcogenides.ADVANCED ELECTRONIC MATERIALS,5(10),-. |
| MLA | Zhao, LL,et al."Regulation of the Crystal Structure Leading to the Bandgap Widening and Phonon Scattering Increasing in Cu3SnS4-Cu3SbSe3 Chalcogenides".ADVANCED ELECTRONIC MATERIALS 5.10(2019):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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