Wavelength-tunable InAsP quantum dots in InP nanowires
文献类型：期刊论文
| 作者 | Zhong, ZQ; Li, XL; Wu, J; Li, C; Xie, RB; Yuan, XM; Niu, XB; Wang, WH; Luo, XR; Zhang, GJ |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2019 |
| 卷号 | 115期号:5页码:- |
| 关键词 | SINGLE NANOWIRE GROWTH PHOTODETECTORS ENHANCEMENT MORPHOLOGY |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.5095675 |
| 文献子类 | 期刊论文 |
| 英文摘要 | There is considerable interest in quantum dots incorporated in nanowires for nanolasers and quantum emitters. In this letter, we demonstrate single InAsP quantum dots embedded in InP nanowires grown by metalorganic vapor-phase epitaxy. Despite the abrupt change of growth conditions at the interface, InAsP quantum dots can be grown in pure wurtzite InP nanowires. We develop a model and analyze the effects of the thickness of InAsP quantum dots and the composition of As on the formation of dislocations. Furthermore, the InAsP/InP quantum dot nanowires show bright photoluminescence up to room temperature without any surface passivation. The emission from the quantum dots could be well tuned by adjusting the dot size either vertically or laterally. The study demonstrates the potential of this material system for optoelectronic applications. Published under license by AIP Publishing. |
| 语种 | 英语 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/32275]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 作者单位 | 1.Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China; 2.Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Sichuan, Peoples R China; 3.South China Normal Univ, Coll Biophoton, MOE Key Lab Laser Life Sci, Guangzhou 510631, Guangdong, Peoples R China; 4.South China Normal Univ, Coll Biophoton, Inst Laser Life Sci, Guangzhou 510631, Guangdong, Peoples R China; 5.Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia; 6.Chinese Acad Sci, Shanghai Inst Appl Phys, 2019 Jia Luo Rd, Shanghai 201800, Peoples R China; 7.Cent S Univ, Sch Phys & Elect, Hunan Key Lab Supermicrostruct & Ultrafast Proc, 932 South Lushan Rd, Changsha 410083, Hunan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhong, ZQ,Li, XL,Wu, J,et al. Wavelength-tunable InAsP quantum dots in InP nanowires[J]. APPLIED PHYSICS LETTERS,2019,115(5):-. |
| APA | Zhong, ZQ.,Li, XL.,Wu, J.,Li, C.,Xie, RB.,...&Jagadish, C.(2019).Wavelength-tunable InAsP quantum dots in InP nanowires.APPLIED PHYSICS LETTERS,115(5),-. |
| MLA | Zhong, ZQ,et al."Wavelength-tunable InAsP quantum dots in InP nanowires".APPLIED PHYSICS LETTERS 115.5(2019):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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