Memory Analysis for Memristors and Memristive Recurrent Neural Networks
文献类型：期刊论文
| 作者 | Gang Bao; Yide Zhang; Zhigang Zeng |
| 刊名 | IEEE/CAA Journal of Automatica Sinica
 |
| 出版日期 | 2020 |
| 卷号 | 7期号:1页码:96-105 |
| 关键词 | Dopant drift memory memristive neural networks memristor |
| ISSN号 | 2329-9266 |
| DOI | 10.1109/JAS.2019.1911828 |
| 英文摘要 | Traditional recurrent neural networks are composed of capacitors, inductors, resistors, and operational amplifiers. Memristive neural networks are constructed by replacing resistors with memristors. This paper focuses on the memory analysis, i.e. the initial value computation, of memristors. Firstly, we present the memory analysis for a single memristor based on memristors' mathematical models with linear and nonlinear drift. Secondly, we present the memory analysis for two memristors in series and parallel. Thirdly, we point out the difference between traditional neural networks and those that are memristive. Based on the current and voltage relationship of memristors, we use mathematical analysis and SPICE simulations to demonstrate the validity of our methods. |
| 源URL | [http://ir.ia.ac.cn/handle/173211/42925]  |
| 专题 | 自动化研究所_学术期刊_IEEE/CAA Journal of Automatica Sinica |
| 推荐引用方式 GB/T 7714 | Gang Bao,Yide Zhang,Zhigang Zeng. Memory Analysis for Memristors and Memristive Recurrent Neural Networks[J]. IEEE/CAA Journal of Automatica Sinica,2020,7(1):96-105. |
| APA | Gang Bao,Yide Zhang,&Zhigang Zeng.(2020).Memory Analysis for Memristors and Memristive Recurrent Neural Networks.IEEE/CAA Journal of Automatica Sinica,7(1),96-105. |
| MLA | Gang Bao,et al."Memory Analysis for Memristors and Memristive Recurrent Neural Networks".IEEE/CAA Journal of Automatica Sinica 7.1(2020):96-105. |
入库方式： OAI收割
来源：自动化研究所
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