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A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation

文献类型：期刊论文

作者Liu, Xifeng2; Liang, Shan1; Liu, Wenju1; Sun, Ping2
刊名IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
出版日期2021-04-01
卷号68期号:4页码:1093-1097
关键词Voltage reference ZTC curvature compensation a power model CMOS process PSRR
ISSN号1549-7747
DOI10.1109/TCSII.2020.3027768
通讯作者Liu, Xifeng(7239600@qq.com) ; Liang, Shan(sliang@nlpr.ia.ac.cn)
英文摘要This brief presents a voltage reference with high-order curvature compensation based on the zero temperature coefficient (ZTC) of MOSFET. The proposed voltage reference uses a conventional current reference to generate a constant current as of the bias of ZTCMOS. A curvature compensation method based on the alpha power model is combined with the conventional curvature compensation method to obtain a low temperature coefficient. Test results of the proposed voltage reference fabricated with the CSMC 0.18 mu m CMOS process demonstrate that the output voltage is 628mV. The trimmed temperature coefficient achieves 2.5 ppm/degrees C. The line sensitivity is 0.03 %/V, the chip area is 0.024 mm(2), power consumption is 77 mu W. The simulated power supply rejection ratio (PSRR) reaches -91.4 dB at 100 MHz.
资助项目National Natural Science Foundation of China[61971419] ; Jiangsu Natural Science Foundation Youth Fund Project[BK20150123]
WOS研究方向Engineering
语种英语
WOS记录号WOS:000634501300007
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
资助机构National Natural Science Foundation of China ; Jiangsu Natural Science Foundation Youth Fund Project
源URL[http://ir.ia.ac.cn/handle/173211/44209]  
专题模式识别国家重点实验室_智能交互
通讯作者Liu, Xifeng; Liang, Shan
作者单位1.Chinese Acad Sci, Inst Automat, Beijing 100192, Peoples R China
2.Jiangsu Coll Informat Technol, Sch Elect & Informat Engn, Jiangsu Key Lab ASIC Design, Wuxi 214153, Jiangsu, Peoples R China
推荐引用方式
GB/T 7714		 Liu, Xifeng,Liang, Shan,Liu, Wenju,et al. A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,2021,68(4):1093-1097.
APA Liu, Xifeng,Liang, Shan,Liu, Wenju,&Sun, Ping.(2021).A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,68(4),1093-1097.
MLA Liu, Xifeng,et al."A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS 68.4(2021):1093-1097.

入库方式： OAI收割

来源：自动化研究所

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