中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation

文献类型:期刊论文

作者Zhang, T. Y.; Zhao, W.; Liu, X. M.; Zhang, C.
刊名applied physics letters
出版日期2007-07-23
卷号91期号:4页码:41909
ISSN号0003-6951
产权排序1
合作状况国内
英文摘要the nonlinear optical properties of semiconductor quantum wells driven by intense in-plane terahertz electric fields are investigated theoretically by employing the extended semiconductor bloch equations. the dynamical franz-keldysh effect of the optical absorption near the band edge is analyzed with coulomb correlation among the carriers included. the in-plane terahertz field induces a variety of behavior in the absorption spectra, including terahertz replicas of the (dark) 2p exciton and terahertz sidebands of the 1s exciton. the dependence of these interesting features on the intensity, frequency, and phase of the terahertz field is explored in detail.
WOS标题词science & technology ; physical sciences
学科主题数理科学和化学
类目[WOS]physics, applied
研究领域[WOS]physics
关键词[WOS]absorption spectra ; electric-field ; keldysh
收录类别SCI ; EI
语种英语
WOS记录号WOS:000248345500032
公开日期2010-01-12
源URL[http://ir.opt.ac.cn/handle/181661/6440]  
专题西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China
2.Univ Wollongong, Sch Engn Phys, Wollongong, NSW 2522, Australia
推荐引用方式
GB/T 7714
Zhang, T. Y.,Zhao, W.,Liu, X. M.,et al. Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation[J]. applied physics letters,2007,91(4):41909.
APA Zhang, T. Y.,Zhao, W.,Liu, X. M.,&Zhang, C..(2007).Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation.applied physics letters,91(4),41909.
MLA Zhang, T. Y.,et al."Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation".applied physics letters 91.4(2007):41909.

入库方式: OAI收割

来源:西安光学精密机械研究所

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