Approach for defect suppression and preparation of high quality semi-insulating InP
文献类型：期刊论文
| 作者 | Zhao, Y. W.; Dong, Z. Y.; Li, Ch. J. |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2005-02-15 |
| 卷号 | 275期号:1-2页码:E381-E385 |
| 关键词 | Point defects Liquid encapsulated Czochralski Indium phosphide Semi-insulating III-V materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.11.007 |
| 通讯作者 | Zhao, Y. W.(zhaoyw@red.semi.ac.cn) |
| 英文摘要 | Semi-insulating (SI) InP materials have been prepared via Fe-dopingin liquid encapsulated Czochraski growth and high temperature annealing undoped InP, respectively. The SI-InP materials exhibit different electrical properties and thermal stability. Deep level defects in the material have been studied in order to understand the mechanism. It is found that the quality of SI-InP depends on the concentration of deep level defects with energy levels in the range of 0.1-0.4 eV within the band gap. SI-InP with negligible low concentration of the defects exhibits high mobility and good thermal stability. Fe-diffused SI-InP which is obtained by annealingin iron phosphide ambient contains very low concentration of the defects. The origin of the defects has been studied by comparing the influence of the Fe incorporation method and stoichiometry on the defects formation in the SI-InP materials. The results suggest an approach for an improvement of the growth of high quality SI-InP material. (C) 2004 Elsevier B. V. All rights reserved. |
| 资助项目 | K.C. Wong Education Foundation, Hong Kong ; National Natural Science Foundation[10375043] |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000208324600059 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | K.C. Wong Education Foundation, Hong Kong ; National Natural Science Foundation |
| 源URL | [http://ir.imr.ac.cn/handle/321006/85093]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhao, Y. W. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Y. W.,Dong, Z. Y.,Li, Ch. J.. Approach for defect suppression and preparation of high quality semi-insulating InP[J]. JOURNAL OF CRYSTAL GROWTH,2005,275(1-2):E381-E385. |
| APA | Zhao, Y. W.,Dong, Z. Y.,&Li, Ch. J..(2005).Approach for defect suppression and preparation of high quality semi-insulating InP.JOURNAL OF CRYSTAL GROWTH,275(1-2),E381-E385. |
| MLA | Zhao, Y. W.,et al."Approach for defect suppression and preparation of high quality semi-insulating InP".JOURNAL OF CRYSTAL GROWTH 275.1-2(2005):E381-E385. |
入库方式： OAI收割
来源：金属研究所
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