Transparent conductive ZnO : Al thin films deposited on flexible substrates prepared by direct current magnetron sputtering
文献类型:期刊论文
作者 | Pei, ZL; Zhang, XB; Zhang, GP; Gong, J; Sun, C; Huang, RF; Wen, LS |
刊名 | THIN SOLID FILMS
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出版日期 | 2006-02-21 |
卷号 | 497期号:1-2页码:20-23 |
关键词 | zinc oxide TCO buffer layer sputtering |
ISSN号 | 0040-6090 |
DOI | 10.1016/j.tsf.2005.09.010 |
通讯作者 | Wen, LS() |
英文摘要 | In this paper, we report different methods to reduce the sheet resistance of ZnO:Al (AZO) films on flexible substrates without degrading the optical transmittance in the visible range. Under proper bias, AZO films deposited on Al2O3-buffered flexible substrates showed a significant decrease of sheet resistance when compared with those deposited on bare polymer. The films with resistivity as low as 8.4 x 10(-4) ohm cm and the optical transmittance about 80% have been obtained by improved methods. By calculating the Al doping efficiency and the mean free path of electrons, ionized impurity scattering was considered to be the dominant factor for the transport mechanism of carriers. (c) 2005 Elsevier B.V. All rights reserved. |
WOS研究方向 | Materials Science ; Physics |
语种 | 英语 |
WOS记录号 | WOS:000234957300004 |
出版者 | ELSEVIER SCIENCE SA |
源URL | [http://ir.imr.ac.cn/handle/321006/87072] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Wen, LS |
作者单位 | Chinese Acad Sci, Met Res Inst, Shenyang 110016, Peoples R China |
推荐引用方式 GB/T 7714 | Pei, ZL,Zhang, XB,Zhang, GP,et al. Transparent conductive ZnO : Al thin films deposited on flexible substrates prepared by direct current magnetron sputtering[J]. THIN SOLID FILMS,2006,497(1-2):20-23. |
APA | Pei, ZL.,Zhang, XB.,Zhang, GP.,Gong, J.,Sun, C.,...&Wen, LS.(2006).Transparent conductive ZnO : Al thin films deposited on flexible substrates prepared by direct current magnetron sputtering.THIN SOLID FILMS,497(1-2),20-23. |
MLA | Pei, ZL,et al."Transparent conductive ZnO : Al thin films deposited on flexible substrates prepared by direct current magnetron sputtering".THIN SOLID FILMS 497.1-2(2006):20-23. |
入库方式: OAI收割
来源:金属研究所
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