Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
文献类型：期刊论文
| 作者 | Zhang, Y; Zeng, YP; Ma, L; Wang, BQ; Zhu, ZP; Wang, LC; Yang, FH |
| 刊名 | CHINESE PHYSICS
 |
| 出版日期 | 2006-06-01 |
| 卷号 | 15期号:6页码:1335-1338 |
| 关键词 | resonant tunnelling diode InP substrate molecular beam epitaxy high resolution transmission electron microscope |
| ISSN号 | 1009-1963 |
| 通讯作者 | Zhang, Y() |
| 英文摘要 | This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm(2) has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope. |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000238210900034 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://ir.imr.ac.cn/handle/321006/88994]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhang, Y |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Y,Zeng, YP,Ma, L,et al. Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature[J]. CHINESE PHYSICS,2006,15(6):1335-1338. |
| APA | Zhang, Y.,Zeng, YP.,Ma, L.,Wang, BQ.,Zhu, ZP.,...&Yang, FH.(2006).Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature.CHINESE PHYSICS,15(6),1335-1338. |
| MLA | Zhang, Y,et al."Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature".CHINESE PHYSICS 15.6(2006):1335-1338. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。