中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy

文献类型:期刊论文

作者Shao, Y. D.; Wang, Z.; Dai, Y. Q.; Zhao, Y. W.; Tang, F. Y.
刊名MATERIALS LETTERS
出版日期2007-02-01
卷号61期号:4-5页码:1187-1189
关键词GaSb coincidence Doppler broadening electron irradiation defect
ISSN号0167-577X
DOI10.1016/j.matlet.2006.06.088
通讯作者Wang, Z.(wangzhu@positron.whu.edu.cn)
英文摘要In this paper we present the results of coincidence Doppler broadening (CDB) measurements and positron lifetime spectroscopy (PLS) on the semiconductor material GaSb. Gallium vacancy with positron lifetime of about 283 ps (V(Ga), (283 ps)) was identified in as-grown sample by CDB technique and PAS technique. For electron irradiated samples with dosages of 10(17) cm(-2) and 10(18) cm(-2), the PAS showed almost the same defectrelated positron lifetime of about 285 ps. CDB experiments indicated that defects in irradiated samples were related to Ga vacancies. (c) 2006 Published by Elsevier B.V.
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:000243844100065
出版者ELSEVIER SCIENCE BV
源URL[http://ir.imr.ac.cn/handle/321006/90894]  
专题金属研究所_中国科学院金属研究所
通讯作者Wang, Z.
作者单位1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100080, Peoples R China
2.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
3.Sichuan Univ, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu, Peoples R China
推荐引用方式
GB/T 7714
Shao, Y. D.,Wang, Z.,Dai, Y. Q.,et al. Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy[J]. MATERIALS LETTERS,2007,61(4-5):1187-1189.
APA Shao, Y. D.,Wang, Z.,Dai, Y. Q.,Zhao, Y. W.,&Tang, F. Y..(2007).Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy.MATERIALS LETTERS,61(4-5),1187-1189.
MLA Shao, Y. D.,et al."Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy".MATERIALS LETTERS 61.4-5(2007):1187-1189.

入库方式: OAI收割

来源:金属研究所

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