Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy
文献类型：期刊论文
| 作者 | Cui, J. P.; Duan, Y.; Wang, X. F.; Zeng, Y. P. |
| 刊名 | MICROELECTRONICS JOURNAL
 |
| 出版日期 | 2008-12-01 |
| 卷号 | 39期号:12页码:1542-1544 |
| 关键词 | ZnO film Strain status GaN buffer layer Sapphire MVPE |
| ISSN号 | 0026-2692 |
| DOI | 10.1016/j.mejo.2008.03.002 |
| 通讯作者 | Cui, J. P.(jpcui@semi.ac.cn) |
| 英文摘要 | ZnO film of 8 mu m thickness was grown on a sapphire (0 0 1) substrate with a GaN buffer layer by a novel growth technique called metal-source vapor phase epitaxy (MVPE). The surface of ZnO film measured by scanning electron microscope (SEM) is smooth and shows many regular hexagonal features. The full width at half maximum (FWHM) of ZnO(0 0 2) and (1 0 2) omega-scan rocking curves are 119 and 202 arcsec, corresponding a high crystal quality. The status of the strain in ZnO thick film was particularly analyzed by X-ray diffraction (XRD) omega-20 scanning. The results show that the strain in ZnO film is compressive, which is also supported by Raman scattering spectroscopy. The compressive strain can solve the cracking problem in the quick growth of ZnO thick film. (c) 2008 Elsevier Ltd. All rights reserved. |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics |
| 语种 | 英语 |
| WOS记录号 | WOS:000261647800028 |
| 出版者 | ELSEVIER SCI LTD |
| 源URL | [http://ir.imr.ac.cn/handle/321006/94051]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Cui, J. P. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cui, J. P.,Duan, Y.,Wang, X. F.,et al. Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy[J]. MICROELECTRONICS JOURNAL,2008,39(12):1542-1544. |
| APA | Cui, J. P.,Duan, Y.,Wang, X. F.,&Zeng, Y. P..(2008).Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy.MICROELECTRONICS JOURNAL,39(12),1542-1544. |
| MLA | Cui, J. P.,et al."Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy".MICROELECTRONICS JOURNAL 39.12(2008):1542-1544. |
入库方式： OAI收割
来源：金属研究所
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