中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure

文献类型:期刊论文

作者Wang, Xianjie1,2; Sui, Yu1,3; Tang, Jinke2; Li, Yao4; Zhang, Xingquan1; Wang, Cong1; Liu, Zhiguo1; Su, Wenhui1,3
刊名JOURNAL OF APPLIED PHYSICS
出版日期2009-04-01
卷号105期号:7页码:3
ISSN号0021-8979
DOI10.1063/1.3065987
通讯作者Sui, Yu(suiyu@hit.edu.cn)
英文摘要In this paper, we report the magnetoresistance and the Hall effect in the Fe3O4-SiO2-Si structure. Single phase magnetite films were deposited on n-type silicon substrates using laser molecular beam epitaxy. When the temperature is increased beyond 230 K, the resistance drops rapidly because the conduction path starts to switch from the Fe3O4 film to the inversion layer underneath the native SiO2 via thermally assisted tunneling. A large negative magnetoresistance is observed at about 230 K, and this maximum shifts to higher temperature with increasing film thickness. Hall effect data of the structure show that the carriers are holes above the channel switching temperature. Our results confirm that the large magnetoresistance at similar to 230 K originates from the amplification of the magnetoresistance of the magnetite in the Fe3O4-SiO2-Si structure. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3065987]
WOS研究方向Physics
语种英语
WOS记录号WOS:000266633500272
出版者AMER INST PHYSICS
源URL[http://ir.imr.ac.cn/handle/321006/95744]  
专题金属研究所_中国科学院金属研究所
通讯作者Sui, Yu
作者单位1.Harbin Inst Technol, CCMST, Dept Phys, Harbin 150001, Peoples R China
2.Univ Wyoming, Dept Phys & Astron, Laramie, WY 82071 USA
3.Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
4.Harbin Inst Technol, Ctr Composite Mat, Harbin 150001, Peoples R China
推荐引用方式
GB/T 7714
Wang, Xianjie,Sui, Yu,Tang, Jinke,et al. Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure[J]. JOURNAL OF APPLIED PHYSICS,2009,105(7):3.
APA Wang, Xianjie.,Sui, Yu.,Tang, Jinke.,Li, Yao.,Zhang, Xingquan.,...&Su, Wenhui.(2009).Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure.JOURNAL OF APPLIED PHYSICS,105(7),3.
MLA Wang, Xianjie,et al."Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure".JOURNAL OF APPLIED PHYSICS 105.7(2009):3.

入库方式: OAI收割

来源:金属研究所

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