Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure
文献类型：期刊论文
| 作者 | Wang, Xianjie1,2; Sui, Yu1,3; Tang, Jinke2; Li, Yao4; Zhang, Xingquan1; Wang, Cong1; Liu, Zhiguo1; Su, Wenhui1,3 |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2009-04-01 |
| 卷号 | 105期号:7页码:3 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3065987 |
| 通讯作者 | Sui, Yu(suiyu@hit.edu.cn) |
| 英文摘要 | In this paper, we report the magnetoresistance and the Hall effect in the Fe3O4-SiO2-Si structure. Single phase magnetite films were deposited on n-type silicon substrates using laser molecular beam epitaxy. When the temperature is increased beyond 230 K, the resistance drops rapidly because the conduction path starts to switch from the Fe3O4 film to the inversion layer underneath the native SiO2 via thermally assisted tunneling. A large negative magnetoresistance is observed at about 230 K, and this maximum shifts to higher temperature with increasing film thickness. Hall effect data of the structure show that the carriers are holes above the channel switching temperature. Our results confirm that the large magnetoresistance at similar to 230 K originates from the amplification of the magnetoresistance of the magnetite in the Fe3O4-SiO2-Si structure. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3065987] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000266633500272 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.imr.ac.cn/handle/321006/95744]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Sui, Yu |
| 作者单位 | 1.Harbin Inst Technol, CCMST, Dept Phys, Harbin 150001, Peoples R China 2.Univ Wyoming, Dept Phys & Astron, Laramie, WY 82071 USA 3.Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China 4.Harbin Inst Technol, Ctr Composite Mat, Harbin 150001, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Xianjie,Sui, Yu,Tang, Jinke,et al. Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure[J]. JOURNAL OF APPLIED PHYSICS,2009,105(7):3. |
| APA | Wang, Xianjie.,Sui, Yu.,Tang, Jinke.,Li, Yao.,Zhang, Xingquan.,...&Su, Wenhui.(2009).Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure.JOURNAL OF APPLIED PHYSICS,105(7),3. |
| MLA | Wang, Xianjie,et al."Amplification of magnetoresistance and Hall effect of Fe3O4-SiO2-Si structure".JOURNAL OF APPLIED PHYSICS 105.7(2009):3. |
入库方式： OAI收割
来源：金属研究所
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